RB161L-40_11

Data Sheet Schottky Barrier Diode RB161L-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 3)High reliability ① ② 0.1±0.02 　　　 0.1 5.0±0.3 3 3 4.5±0.2 Features 1)Small power mold type. PMDS） （ 2)Low VF 1.2±0.3 Construction Silicon epitaxial planar 1.5±0.2 2.0±0.2 PMDS Structure ROHM : PMDS JEDEC : SOD-106 Manufacture Date Date ① ② Manufacture Taping specifications(Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz 1cyc) ・ Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 20 1 70 125 40 to 125 Unit V V A A C C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current 5.3±0.1 　 0.05 9.5±0.1 Symbol VF IR Min. - Typ. - Max. 0.40 1 Unit V mA IF=1.0A VR=20V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.H 12±0.2 4.2 RB161L-40 Data Sheet Ta=75℃ 1 Ta=125℃ 1000000 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ 100 Ta=-25℃ 10 1 0 200 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 0.1 Ta=25℃ Ta=-25℃ 0.01 10000 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150℃ 100000 100 10 0.001 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 370 500 300 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 360 350 340 AVE:347.7mV 330 320 VF DISPERSION MAP Ta=25℃ IF=1A n=30pcs 450 400 350 300 250 200 150 100 50 0 AVE:110.3uA Ta=25℃ VR=20V n=30pcs 290 280 270 260 250 240 230 220 210 200 AVE:251.8pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 150 20 200 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 100 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 150 8.3ms 8.3ms 1cyc 10 100 50 AVE:127.0A 0 IFSM DISPERSION MAP 5 AVE:9.3ns 0 trr DISPERSION MAP 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 200 1000 1 0.9 Mounted on epoxy board Rth(j-a) 0.8 Ifsm 150 t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) FORWARD POWER DISSIPATION:Pf(W) 100 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 D=1/2 DC Sin(θ＝180) 100 10 IM=100mA Rth(j-c) IF=0.5A 50 1 1ms time 300us 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.H RB161L-40 Data Sheet 50 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 10 20 30 40 3 0A 0V DC D=1/2 Io t T VR D=t/T VR=20V Tj=125℃ 2.5 2 1.5 D=1/2 1 0.5 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:0T(℃) Derating Curveﾞ(Io-Tc) 125 Sin(θ＝180) DC 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ 30 D=1/2 DC 20 10 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Sin(θ＝180) 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:12.3kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 40 REVERSE POWER DISSIPATION:PR (W) 2011.04 - Rev.H Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A