RB161M-20

RB161M-20 Diodes Schottky barrier diode RB161M-20 Applications General rectification External dimensions (Unit : mm) 1 .6±0.1 0.1±0.1 　　　 0 .05 Land size figure 1.2 0.8 5 2 .6±0.1 3 .5±0.2 Features 1) Power mold type. (CPD3) 2) Low VF 3) High reliability Construction Silicon epitaxial planar 0.9±0.1 PMDU Structure ROHM : PMDU JEDEC :SOD-1 23 Manu facture Date 0.8±0.1 Taping dimensions (Unit : mm) 4 .0±0.1 2.0±0.0 5 φ1 .55±0.05 1.75±0.1 0.2 5 ±0 .0 5 3.5±0.05 8.0±0.2 1.8 1 ±0 .1 4.0 ±0 .1 φ1.0±0.1 3.71 ±0 .1 1.5 MAX Absolute maximum ratings (Ta=25°C) Param eter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak Junction tem perature Storage tem perature Sym bol VRM VR Io IFSM Tj Tstg Lim its 25 20 1 30 125 -40 to +125 Unit V V A A ℃ ℃ (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristic (Ta=25°C) Param eter Forward voltage Reverse current Sym bol VF1 VF2 IR Min. - Typ. 0.28 0.31 280 Max. 0.32 0.35 700 Unit V V µA Conditions IF=0.5A IF=1.0A VR=20V Rev.B 3.0 5 ① 1/3 RB161M-20 Diodes Electrical characteristic curves 1 Ta=75℃ Ta=125℃ 1000000 Ta=125℃ 100000 10000 1000 100 Ta=-25℃ 10 1 0 100 2 00 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 20 Ta=75℃ 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=25℃ 0.1 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=25℃ 0.01 10 0.001 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 350 1000 Ta=25℃ IF=1A n=30pcs 900 Ta=25℃ VR=20V n=30pcs 400 390 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 340 800 700 600 500 400 300 200 100 AVE:283.1uA 380 370 360 350 340 330 320 310 300 AVE:351.2pF 330 AVE:311.1mV 320 310 300 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 150 30 100 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms 25 20 15 10 5 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 50 50 AVE:65.0A 0 AVE:11.7ns 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 150 1000 1 Mounted on epoxy board Rth(j-a) 0.8 Ifsm t 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 Rth(j-c) IM=100mA IF=1A FORWARD POWER DISSIPATION:Pf(W) 0.6 0.4 0.2 0 Sin(θ＝180) D=1/2 DC 50 10 1ms time 300us 0 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100 1 0.001 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 Rev.B 2/3 RB161M-20 Diodes 5 4 3 3 VR D=t/T VR=10V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 1 0.5 Sin(θ＝180) 0 0 DC 0A 0V Io 2.5 2 1.5 1 0.5 0 Sin(θ＝180) DC D=1/2 0A 0V t T 3 2 1 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC Io VR D=t/T VR=10V Tj=125℃ D=1/2 D=1/2 Sin(θ＝180) 20 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 1 25 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:6.90kV ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1