RB161M-20_11

Data Sheet Schottky Barrier Diode RB161M-20  Applications General rectification  Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3)High reliability 3.5±0.2  Features 1)Small power mold type.（PMDU） 2)Low VF PMDU  Construction Silicon epitaxial planar 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1  Structure  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 0.25±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature (*1)Mounted on epoxy board. 180°Half sine wave Symbol VRM VR Io IFSM Tj Tstg Limits 25 20 1 30 125 40 to 125 Unit V V A A C C  Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF 2 IR Min. - Typ. 0.28 0.31 280 Max. 0.32 0.35 700 Unit V V μA Conditions IF=0.5A IF=1.0A VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 3.05 ① 2011.04 - Rev.B RB161M-20 Data Sheet 1 Ta=75℃ Ta=125℃ 0.1 Ta=25℃ Ta=-25℃ 1000000 Ta=125℃ REVERSE CURRENT:IR(uA) 1000 f=1MHz FORWARD CURRENT:IF(A) 10000 1000 100 Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100000 100 Ta=25℃ Ta=-25℃ 0.01 10 10 1 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 1 0 5 10 15 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 20 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 350 1000 400 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ VR=20V n=30pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 340 330 320 310 300 VF DISPERSION MAP AVE:311.1mV Ta=25℃ IF=1A n=30pcs 900 800 700 600 500 400 300 200 100 0 AVE:283.1uA 390 380 370 360 350 340 330 320 310 300 AVE:351.2pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 150 30 100 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 100 1cyc 8.3ms 25 20 15 10 5 0 AVE:11.7ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 50 50 AVE:65.0A 0 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 150 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Mounted on epoxy board 1 0.8 FORWARD POWER DISSIPATION:Pf(W) t Rth(j-a) 100 Rth(j-c) IM=100mA IF=1A 100 0.6 0.4 0.2 0 Sin(θ＝180) D=1/2 DC 50 10 1ms time 0 0.1 TIME:t(ms) IFSM-t CHARACTERISTICS 1 10 100 1 0.001 300us TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB161M-20 Data Sheet 5 4 3 3 VR D=t/T VR=10V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 1 0.5 Sin(θ＝180) 0 0 DC D=1/2 0A 0V Io 2.5 2 1.5 1 0.5 0 Sin(θ＝180) DC D=1/2 0A 0V t T 3 2 1 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC Io VR D=t/T VR=10V Tj=125℃ D=1/2 Sin(θ＝180) 20 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:6.90kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A