RB161SS-20

Data Sheet Schottky Barrier Diode RB161SS-20 lApplications Small current rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.8 1.6 ±0.05 1 .2 ±0.05 0.5 0.4 ±0.05 lFeatures 1)Small power mold type (KMD2) 2)High reliability 3)Low VF 0 ～0.03 KMD2 0.8 ±0.05 0.6 ±0.03 0.7 ±0.05 lConstruction Silicon epitaxial planer ROHM : KMD2 JEDEC :JEITA : dot (year week factory) lStructure lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak 　(60Hz･1cyc.) Junction temperature Tj Storage temperature Tstg Limits 30 20 1 5 125 -40 to +125 Unit V V A A C C lElectrical characteristics (Ta=25C) Parameter Symbol VF1 Forward Voltage VF2 Reverse Current IR Min. - Typ. 0.33 0.38 0.20 Max. 0.37 0.42 1.00 Unit V V mA Conditions IF=0.7A IF=1.0A VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 1.2 RB161SS-20 　 Data Sheet 10 1000000 Tj=150°C 100000 FORWARD CURRENT:IF(A) Tj=150°C 1 Tj=125°C Tj=25°C 0.1 Tj=75°C REVERSE CURRENT:IR(mA) 10000 Tj=75°C 1000 Tj=125°C Tj=25°C 100 0.01 0 200 400 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 0 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Tj=25°C FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 500 Tj=25°C IF=1.0A n=20pcs 400 100 AVE:384mV 300 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 VF DISPERSION MAP 10000 Tj=25°C VR=20V n=20pcs 1000 AVE:386mA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 200 195 190 185 180 175 170 165 160 155 AVE:181.1pF Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(mA) 100 10 IR DISPERSION MAP 150 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RB161SS-20 　 Data Sheet 30 IFSM 8.3ms 20 1cyc REVERSE RECOVERY TIME:trr(ns) 30 Tj=25°C IF=0.1A IR=0.1A Irr=0.10×IR n=10pcs 25 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 AVE:15.7A 15 AVE:9.3ns 10 10 5 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 100 100 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM time 1cyc 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 0.8 D.C. D=1/2 0.6 Sin(θ＝180) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 1000 0.4 10 0.2 On glass-epoxy substrate soldering land 50mm□ 1 0.001 0 0.01 0.1 1 10 100 0 0.5 1 1.5 2 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RB161SS-20 　 Data Sheet 2 2 0A 0V t D.C. Io VR D=t/T VR=10V Tj=125°C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D.C. 1.5 T D=1/2 1 Sin(θ＝180) 1 Sin(θ＝180) D=1/2 0.5 0.5 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 AVE：3.6kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A