RB162L-40

Data Sheet Schottky Barrier Diode RB162L-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 2.6±0.2 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 4 2 4.5±0.2 Features 1)Small power mold type. (PMDS) 2)High reliability. 1.2±0.3 1.5±0.2 2.0±0.2 PMDS Structure Silicon epitaxial planer ROHM : PMDS JEDEC : SOD-106 Manufacture Date ① ② Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Limits 40 40 1 20 150 40 to 150 Junction temperature Storage temperature (*1)Mounted on glass epoxy board VRM VR Io IFSM Tj Tstg Unit V V A A C C Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current VF IR Min. - Typ. - Max. 0.55 0.1 Unit V mA Conditions IF=1.0A VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 5.3±0.1 　 0.05 9.5±0.1 2011.12 - Rev.A 12±0.2 4.2 RB162L-40 　 Data Sheet 1000 Ta=150°C FORWARD CURRENT:IF(A) Ta=125°C 100 Ta=-25°C REVERSE CURRENT:IR(mA) 10000 Ta=150°C 1000 Ta=125°C 100 10 Ta=75°C Ta=25°C 10 Ta=75°C 1 Ta=25°C 0.1 0.01 Ta=-25°C 1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.001 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz Osc.Lvl.=20mV FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 550 545 540 535 530 525 520 515 510 505 AVE:517.1mV Ta=25°C IF=1.0A n=30pcs 100 10 1 0 10 20 30 500 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF DISPERSION MAP 5 Ta=25°C VR=40V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 220 Ta=25°C f=1MHz n=20pcs 4 REVERSE CURRENT:IR(mA) 210 200 3 190 2 180 AVE:181.3pF 170 1 AVE:2.0mA 0 IR DISPERSION MAP 160 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.12 - Rev.A RB162L-40 　 Data Sheet 100 20 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 90 AVE:82.2A REVERSE RECOVERY TIME:trr(ns) 15 80 10 70 1cyc IFSM 60 8.3ms 50 5 AVE:8.667ns 0 IFSM DISPERSION MAP trr DISPERSION MAP 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 200 150 IFSM t 1cyc 100 100 50 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 1.0 D.C. 0.8 Rth(j-a) D=1/2 Sin(θ＝180) 0.6 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 0.4 10 0.2 1 0.001 0.0 0.01 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.12 - Rev.A RB162L-40 　 Data Sheet 0.2 D.C. AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.15 REVERSE POWER DISSIPATION:PR (W) 2 DC 1.5 D=1/2 1 Sin(θ＝180) 0A 0V t D=t/T T Io VR VR=20V Tj=150°C 0.1 D=1/2 0.05 Sin(θ＝180) 0.5 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 2 DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 D=1/2 1 Sin(θ＝180) 0.5 0A 0V t T D=t/T Io VR VR=20V Tj=150°C 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A