RB162L-60_11

Data Sheet Schottky Barrier Diode RB162L-60  Applications General rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0 2.0  Features 1) Small power mold type. (PMDS) 2) High switching speed 3) Low forward voltage PMDS  Construction Silicon epitaxial planer  Structure  Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 4.2 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX  Absolute maximum ratings (Tl=25 C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified forward current Forward current surge peak Junction temperature Storage temperature  Electrical characteristics (Tj=25 C) Parameter Forward voltage Reverse current Symbol VRM VR Io IFSM Tj Tstg Conditions D0.5 Direct voltage Glass epoxy substrate mounted R-road, 60Hz half sin wave 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25 C 5.3±0.1 　 0.05 9.5±0.1 Limits 60 60 1.0 20 150 40 to 150 12±0.2 Unit V V A A C C Symbol VF IR Conditions IF=1.0A VR=60V Min. - Typ. 0.54 4 Max. 0.65 100 Unit V μA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.A RB162L-60 Data Sheet 1 Tj=150 C 100000 Tj=150 C Tj=125  C 10000 1000 100 10 1 0.1 Tj=125  C 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS : Ct(pF) FORWARD CURRENT : I F(A) Tj=125 C REVERSE CURRENT : IR(A) 100 0.1 Tj=25 C Tj=25 C Tj=25 C 10 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 40 50 60 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 550 FORWARD VOLTAGE : VF(mV) 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Tj=25 C IF =1.0A n=20pcs Tj=25 C VR=60V n=20pcs 200 190 180 170 160 150 140 130 120 110 AVE : 168.0pF Tj=25 C f=1MHz VR=0V n=10pcs 540 530 520 510 500 490 480 VF DISPERSION MAP AVE : 515.2mV REVERSE CURRENT : I R(A) 10 AVE : 6.0A 1 IR DISPERSION MAP 100 Ct DISPERSION MAP 120 100 80 60 AVE : 80.8A 40 20 0 IFSM DISRESION MAP Ifsm 1cyc 30 REVERSE RECOVERY TIME : trr(ns) 100 PEAK SURGE FORWARD CURRENT : I FSM(A) ITS ABILITY OF PEAK SURGE FORWARD CURRENT : I FSM(A) 8.3ms 20 Tj=25 C IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs Ability 10 Ratings Ifsm 8.3ms 8.3ms 10 AVE : 11.6ns 1cyc 0 trr DISPERSION MAP 1 1 10 NUMBER OF CYCLES I FSM -CYCLE CHARACTERISTICS 100 1000 ELECTROSTATIC DISCHARGE TEST ESD(KV) Ifsm 30 25 20 15 10 5 AVE : 5.0kV TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) 1000 No break at 30kV Rth(j-a) On glass-epoxy substrade 2 soldering land 2mm PEAK SURGE FORWARD CURRENT : I FSM(A) Ability 100 t 100 Rth(j-l) 10 Rth(j-a) On glass-epoxy substrade 10 Ratings 1 soldering land 10mm 2 1 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0 C=200pF R=0 C=100pF R=1.5k 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A RB162L-60 Data Sheet 0A 0V t Io VR 1.8 1.6 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) AVERAGE RECTIFIED FORWARD CURRENT : Io(A) D=t/T VR=30V T Tj=150 C On glass-epoxy substrate soldering land 2mm D=0.8 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 half sin wave D=0.5 D=0.8 D.C. VR t D=t/T VR=30V T Tj=150 C On glass-epoxy substrate soldering land 10mm 0A 0V Io 0A 0V t 1.8 Io VR T D=t/T VR=30V Tj=150 C D.C. 1.6 1.4 1.2 1 0.8 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 30 60 D.C. D=0.5 D=0.8 half sin wave 0.6 0.4 0.2 0 D=0.5 half sin wave 90 120 150 0 30 60 90 120 150 0 30 60 90 120 150 AMBIENT TEMPERATURE : Ta(  C) Derating Curve"(Io-Ta) 1.4 D.C. 1.2 D=0.8 AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tl( C) Derating Curve"(Io-Tl) FORWARD POWER DISSIPATION : Pf(W) 1 D=0.5 0.8 half sin wave 0.6 0.4 0.2 0 0 0.3 0.6 0.9 1.2 1.5 1.8 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A