Schottky Barrier Diode
RB162M-40
Applications General rectification Dimensions(Unit : mm) Land size figure(Unit : mm)
1.2 0.85
Features 1)Small power mold type.(PMDU) 2)Low IR 3)High reliability
PMDU
Construction Silicon epitaxial planer
Structure
Taping specifications(Unit : mm)
4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05
3.5±0.05
8.0±0.2
1.81±0.1
4.0±0.1
φ1.0±0.1
3.71±0.1 1.5MAX
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 40 40 1 30 150 -40to+150
Unit V V A A
C C
(*1)Mounting on epoxi board. (Tc=100°C MAX ) Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current
Symbol VF IR
Min. -
Typ. -
Max. 0.55 100
Unit V μA IF=1A VR=40V
Conditions
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1/3
2010.02 - Rev.A
3.05
RB162M-40
Data Sheet
Electrical characteristics curves
Ta=150 C 1000 Ta=150 C 10000 1000
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
1000
f=1MHz
FORWARD CURRENT : IF(mA)
Ta=125 C 100 Ta=-25 C Ta=25 C 10 Ta=75 C
REVERSE CURRENT : IR(A)
100 10
Ta=75 C
Ta=125 C
100
Ta=25 C 1 0.1 0.01 Ta=-25 C
10
0.001 1 0 100 200 300 400 500 600 0 10 20 30 40
1 0 5 10 15 20 25 30 35
FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS
REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
550
CAPACITANCE BETWEEN TERMINALS : Ct(pF)
FORWARD VOLTAGE : VF(mV)
REVERSE CURRENT : IR(A)
540
Ta=25℃ Ta=25 C IF=1A IF=1.0A n=30pcs n=30pcs
10 9 8 7 6 5 4 3 2 1 0 AVE : 2.0 A Ta=25 C VR=40V n=30pcs
220 210 200 190 180 AVE : 181.3pF 170 160 Ta=25 C f=1MHz n=20pcs
530
520
510
AVE : 517.1mV
AVE:349.9mV
500
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
RESERVE RECOVERY TIME : trr(ns)
200
30 25 20 15 10 5 AVE : 7.8ns 0 25 C AVE : 10.2ns 80 C
PEAK SURGE FORWARD CURRENT : IFSM(A)
Ifsm
150 8.3ms 100
1cyc
PEAK SURGE FORWARD CURRENT : IFSM(A)
Ta=25,80 C IF=0.5A IR=1A Irr=0.25*IR n=20pcs
1000
Ifsm 8.3ms 8.3ms 1cyc 100
50
AVE : 68.8A
0 IFSM DISPERSION MAP
10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
trr DISPERSION MAP
200
1000
On glass-epoxy board 1
IM=10mA TRANSIENT THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : IFSM(A) Ifsm t
1ms
IF=0.5A
Rth(j-a)
0.9 0.8
D=1/2 DC
150
100
tim FORWARD POWER DISSIPATION : Pf(W)
300s
Rth(j-c) 10
0.7 0.6 0.5 0.4 0.3 0.2 0.1
Sin(=180)
100
50
1
0 1 10 100
0.1 0.001
0 0.01 1 10 100 TIME : t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.5 1 1.5 2
TIME : t(ms) IFSM-t CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS
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2/3
2010.02 - Rev.A
RB162M-40
Io t T 1.5 D=1/2 1 VR AVERAGE RECTIFIED FORWARD CURRENT : Io(A) D=t/T VR=20V Tj=150 C 2 DC 0A 0V t
Data Sheet
Io VR D=t/T VR=20V Tj=150 C 0A
0.2
2 DC AVERAGE RECTIFIED FORWARD CURRENT : Io(A)
0V
T 1.5 D=1/2 1 Sin(=180) 0.5 On glass-epoxy board 0
REVERSE POWER DISSIPATION : PR (W)
0.15
0.1 DC 0.05 Sin(=180)
D=1/2
0.5
Sin(=180) On glass-epoxy board
0 0 10 20 30 REVERSE VOLTAGE : V R(V) VR-PR CHARACTERISTICS 40
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta)
0
25
50
75
100
125
150
CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc)
30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE : 6.2kV 0 C=200pF R=0 C=100pF R=1.5k
ESD DISPERSION MAP
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3/3
2010.02 - Rev.A
Notice
Notes
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R1010A
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