RB162M-60

Data Sheet Schottky Barrier Diode RB162M-60 lApplications General rectification lDimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 lLand size figure (Unit : mm) 1.2 0.85 lFeatures 1)Small power mold type.(PMDU) 2)Low IR 3)High reliability 2.6±0.1 3.5±0.2 PMDU lConstruction Silicon epitaxial planer 0 .9±0.1 lStructure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 3.5±0.05 1.75±0.1 0.25±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ 1.0±0.1 3.71±0.1 1.5MAX lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounting on glass epoxi board Tc=90°C max. lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current IR Limits 60 60 1 20 150 -40 to +150 Unit V V A A C C Min. - Typ. - Max. 0.65 100 Unit V μA IF=1A VR=60V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 3.05 ① RB162M-60 　 Data Sheet 1 Tj=150°C FORWARD CURRENT:IF(A) 100000 Tj=150°C 10000 REVERSE CURRENT:IR(nA) Tj=125°C Tj=125°C 0.1 1000 Tj=75°C Tj=25°C Tj=75°C 100 10 Tj=25°C 1 0.01 0 200 400 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.1 0 20 40 60 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz 560 Tj=25°C IF=1A n=20pcs 100 FORWARD VOLTAGE:VF(mV) 540 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 520 500 AVE:515.2mV 10 480 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 460 VF DISPERSION MAP 100 Tj=25°C VR=60V n=20pcs 200 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 170 160 150 140 130 120 110 AVE:168.0pF Tj=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) 10 AVE:6.0uA 1 IR DISPERSION MAP 100 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RB162M-60 　 Data Sheet 100 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 80 8.3ms 60 1cyc REVERSE RECOVERY TIME:trr(ns) 30 Tj=25°C IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs 20 AVE:61.6A 40 10 AVE:11.6ns 20 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 8.3ms 1000 IFSM time 1cyc. 100 10 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 1000 Rth(j-a) On glass-epoxy substrate soldering land 2mm×0.85mm Rth(j-l) 10 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 100 20 15 10 AVE:5.0kV 1 5 C=200pF R=0Ω C=100pF R=1.5kΩ Rth(j-a) On glass-epoxy substrate soldering land 6mm×6mm 0 0.1 0.001 0.01 0.1 1 10 100 1000 ESD DISPERSION MAP TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RB162M-60 　 Data Sheet 0A 0V 1.4 D.C. 1.2 D=0.5 half sin wave 0.8 D=0.8 1.6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) FORWARD POWER DISSIPATION:Pf(W) 1 1.4 1.2 1 half sin wave 0.8 0.6 0.4 0.2 0.2 0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 0 30 60 90 120 150 CASE TEMPERATURE:Tl(°C) DERATING CURVE (Io-Tl) D.C. D=0.8 D=0.5 2 1.8 t T Io VR D=t/T VR=30V Tj=150°C 0.6 0.4 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A