RB162VA-20

Schottky barrier Diode RB162VA-20 Applications General rectification Dimensions (Unit : mm) 0.17 −0.05 +0.1 Land size figure (Unit : mm) 1.1 3)High reliability TUMD2 Structure Silicon epitaxial planer Structure 0.6 +0.2 −0.1 Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz/1cyc) Limits 25 20 1.0 5.0 125 -40 to +125 Junction temperature Storage temperature VRM VR Io IFSM Tj Tstg Unit V V A A C C Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current VF IR Min. - Typ. 0.36 0.3 Max. 0.4 1.2 Unit V mA 0.8 0.5 Conditions IF=1.0A VR=20V Feature 1)Small mold type (TUMD2) 2)Low VF www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2.0 1/3 2010.02 - Rev.A RB162VA-20 Electrical characteristics curves 10 FORWARD CURRENT : IF(A) Ta=125 C 1 Ta=75 C 0.1 REVERSE CURRENT : IR(A) 10000 100000 　 1000 Ta=125 C CAPACITANCE BETWEEN TERMINALS : Ct(pF) Data Sheet f=1MHz 100 1000 Ta=75 C 100 Ta=25 C 0.01 Ta=25 C Ta=-25 C 10 10 Ta=-25 C 1 0.001 0.0 1 0 5 10 15 20 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 0.1 0.2 0.3 0.4 0.5 0 10 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 20 FORWARD VOLTAGE : V F(V) VF-IF CHARACTERISTICS 400 Ta=25 C VF=1.0A n=30pcs 450 CAPACITANCE BETWEEN TERMINALS : Ct(pF) Ta=25 C VR=20V n=30pcs 180 178 176 174 172 170 168 166 164 162 160 Ct DISPERSION MAP AVE:172pF Ta=25 C f=1MHz VR=0V n=30pcs FORWARD VOLTAGE : VF(mV) 380 REVERSE CURRENT : IR(A) 400 360 350 340 300 AVE : 354A 250 320 AVE : 371mV 300 VF DISPERSION MAP IR DISPERSION MAP 30 PEAK SURGE FORWARD CURRENT : IFSM(A) 25 20 15 10 5 AVE : 14.6A 0 IFSM DISRESION MAP Ifsm 1cyc 8.3ms RESERVE RECOVERY TIME : trr(ns) 30 PEAK SURGE FORWARD CURRENT : IFSM(A) 25 20 15 10 5 AVE : 7.70ns 0 trr DISPERSION MAP Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 30 25 20 15 10 5 0 Ifsm 8.3ms 8.3ms 1cyc 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 30 25 20 15 10 5 0 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t 1000 TRANSIENT  THAERMAL IMPEDANCE : Rth ( C/W) On glass-epoxy board IM=10mA 0.3 IF=0.1A FORWARD POWER DISSIPATION : Pf(W) time Rth(j-a) PEAK SURGE FORWARD CURRENT : IFSM(A) 1ms 300s 100 Rth(j-c) 0.2 D=1/2 Sin(=180) 0.1 DC 10 0.001 0 0.01 0.1 1 10 100 1000 0 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS 0.1 0.5 TIME : t(s) Rth-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.A RB162VA-20 　 Data Sheet 3 0.5 0A 0V t DC T Io VR AVERAGE RECTIFIED FORWARD CURRENT : Io(A) D=t/T VR=45V Tj=125 C 0.5 0A 0V t DC T Io VR D=t/T VR=45V Tj=125 C AVERAGE RECTIFIDE FORWARD CURRENT : Io(A) 0.4 0.4 REVERSE POWER DISSIPATION : PR (W) 2 D=1/2 DC 1 Sin(=180) 0.3 D=1/2 0.3 D=1/2 0.2 0.2 0.1 Sin(θ=180) 0.1 Sin(θ=180) 0 0 0 20 40 60 80 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) 0 25 50 75 100 125 CASE TEMPARATURE : Tc(  C) Derating Curve"(Io-Tc) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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