RB168M-40

Data Sheet Schottky Barrier Diode RB168M-40 lApplications General rectification lDimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 lLand size figure (Unit : mm) 1.2 0.85 lFeatures 1)Small power mold type. (PMDU) 2)Low IR 3)High reliability 2.6±0.1 3.5±0.2 PMDU lConstruction Silicon epitaxial 0 .9±0.1 lStructure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ 1.0±0.1 3.71±0.1 1.5MAX lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave Limits 40 40 1 30 150 -55 to +150 Unit V V A A °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR Min. - Typ. 0.60 0.05 Max. 0.65 0.55 Unit V μA IF=1.0A VR=40V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A 3.05 ① RB168M-40 　 Data Sheet 1 Ta=75℃ 1000000 Ta=150℃ 100000 REVERSE CURRENT:IR(ｎA) Ta=125℃ 1000 f=1MHz FORWARD CURRENT:IF(A) Ta=125℃ 0.1 Ta=150℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 35 40 10000 Ta=75℃ 1000 100 10 Ta=-25℃ 1 0.1 Ta=25℃ 100 0.01 Ta=25℃ Ta=-25℃ 10 0.001 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 600 Ta=25℃ VF=1A n=30pcs 100 90 REVERSE CURRENT:IR(nA) REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 300 290 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ VR=40V n=30pcs AVE:48.6nA 280 270 260 250 240 230 220 210 200 IR DISPERSION MAP Ct DISPERSION MAP AVE:244.4pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 590 80 70 60 50 40 30 20 10 580 AVE:569.2mV 570 560 550 VF DISPERSION MAP 0 200 Ifsm 8.3ms 1cyc REVERSE RECOVERY TIME:trr(ns) 30 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 Ifsm 8.3ms 60 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 150 80 20 1cyc 100 15 AVE:8.0ns 10 40 50 AVE:84.0A 20 5 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 200 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 100 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Sin(θ＝180) DC D=1/2 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 150 t Rth(j-c) 10 100 50 1 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 0.1 0.001 0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A RB168M-40 3 　 0A 0V t 2.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io VR T 2 DC 1.5 D=1/2 1 D=t/T VR=20V Tj=150℃ 2.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 0A 0V Data Sheet Io t T 2 DC 1.5 D=1/2 1 VR D=t/T VR=20V Tj=150℃ 0.01 REVERSE POWER DISSIPATION:PR (W) DC D=1/2 Sin(θ＝180) 0.005 0.5 Sin(θ＝180) 0.5 Sin(θ＝180) 0 0 10 20 30 40 0 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:6.1kV 0 C=200pF R=0Ω ESD DISPERSION MAP C=100pF R=1.5kΩ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.06 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A