Data Sheet
Schottky Barrier Diode
RB168M-60
lApplications General rectification lDimensions (Unit : mm)
1.6±0.1 0.1±0.1 0.05
lLand size figure (Unit : mm)
1.2
0.85
lFeatures 1)Small power mold type. (PMDU) 2)Low IR 3)High reliability
2.6±0.1
3.5±0.2
PMDU
lConstruction Silicon epitaxial
0 .9±0.1
lStructure
0.8±0.1
ROHM : PMDU JEDEC :SOD-123 Manufacture Date
lTaping specifications (Unit : mm)
4.0±0.1 2.0±0.05 φ 1.55±0.05
1.75±0.1
0.25±0.05
3.5±0.05
8.0±0.2
1.81±0.1
4.0±0.1
φ 1.0±0.1
3.71±0.1
1.5MAX
lAbsolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave
Limits 60 60 1 30 150 -55 to +150
Unit V V A A °C °C
lElectrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR
Min. -
Typ. 0.63 0.10
Max. 0.68 1.5
Unit V μA IF=1.0A VR=60V
Conditions
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1/3
2011.06 - Rev.A
3.05
①
RB168M-60
Data Sheet
1
1000000 Ta=150℃ 100000 REVERSE CURRENT:IR(nA) Ta=125℃
1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 60
FORWARD CURRENT:IF(A)
Ta=75℃ 0.1
10000 Ta=75℃ 1000 100 10 1 0.1 Ta=25℃
100
Ta=125℃ Ta=25℃ 0.01 Ta=150℃ Ta=-25℃
Ta=-25℃
10
0.001 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 630 620 610 600 590 580 AVE:594.1mV 570 Ta=25℃ IF=1A n=30pcs
1 0 10 20 30 40 50 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 240 Ta=25℃ VR=60V n=30pcs Ta=25℃ f=1MHz VR=10V n=10pcs
160 140 REVERSE CURRENT:IR(nA) 120 100 80 60 40 20 0 AVE:79.1nA
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
230
220
210
200
AVE:207pF
190
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
150 PEAK SURGE FORWARD CURRENT:IFSM(A)
1cyc REVERSE RECOVERY TIME:trr(ns) 8.3ms
30 25 20 15 10 5 AVE:6.8ns 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
100 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 50
100
50
AVE:86.0A
0 IFSM DISPERSION MAP
0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
200 Ifsm 150 t
1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 100
1.5
PEAK SURGE FORWARD CURRENT:IFSM(A)
1 Sin(θ=180) 0.5
D=1/2 DC
100
10
Rth(j-c)
50
1
0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS
0.1 0.001
0 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2
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2/3
2011.06 - Rev.A
RB168M-60
3 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 0 Sin(θ=180) 0V t DC T 3 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=30V Tj=150℃ 2.5 2 DC 1.5 D=1/2 1 0.5 0 0 25 50 75 Sin(θ=180)
Data Sheet
0.01
0A 0V t T
Io VR D=t/T VR=30V Tj=150℃
0.008 REVERSE POWER DISSIPATION:PR (W)
0.006 DC
D=1/2
0.004 Sin(θ=180)
0.002
0 0 10 20 30 40 50 60 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS
0
25
50
75
100
125
150
100
125
150
AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta)
CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc)
30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ
AVE:4.10kV
ESD DISPERSION MAP
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3/3
2011.06 - Rev.A
Notice
Notes
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R1120A
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