RB168M-60_12

Schottky Barrier Diode RB168M-60 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 0.85 Features 1)Small power mold type. (PMDU) 2)Low IR 3)High reliability 2.6±0.1 3.5±0.2 PMDU Construction Silicon epitaxial 0.9±0.1 Structure 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.25±0.05 3.5±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board. 180°Half sine wave Limits 60 60 1 30 150 55 to 150 Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR Min. - Typ. 0.63 0.10 Max. 0.68 1.5 Unit V μA IF=1.0A VR=60V Conditions www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. 1/3 2012.03 - Rev.B 3.05 ① RB168M-60 　 DataSheet 1 1000000 Ta=150℃ 100000 REVERSE CURRENT:IR(nA) Ta=125℃ 1000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 60 FORWARD CURRENT:IF(A) Ta=75℃ 0.1 10000 Ta=75℃ 1000 100 10 1 0.1 Ta=25℃ 100 Ta=125℃ 0.01 Ta=150℃ Ta=25℃ Ta=25℃ Ta=25℃ 10 0.001 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 630 620 610 600 590 580 AVE:594.1mV 570 Ta=25℃ IF=1A n=30pcs 0 10 20 30 40 50 1 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 240 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 160 140 REVERSE CURRENT:IR(nA) 120 100 80 60 40 20 0 190 AVE:79.1nA Ta=25℃ VR=60V n=30pcs FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 230 Ta=25℃ f=1MHz VR=0V n=10pcs 220 210 200 AVE:207pF VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 150 PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) 30 25 20 15 10 5 AVE:6.8ns 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25IR n=10pcs 100 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 50 100 50 AVE:86.0A 0 IFSM DISPERSION MAP 0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 200 Ifsm 150 t 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 100 1.5 PEAK SURGE FORWARD CURRENT:IFSM(A) 1 Sin(θ＝180) 0.5 D=1/2 DC 100 10 Rth(j-c) 50 1 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/3 2012.03 - Rev.B RB168M-60 　 3 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 0 Sin(θ＝180) DC 0V t T 3 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=30V Tj=150℃ 2.5 2 DC 1.5 D=1/2 1 0.5 0 0 25 50 75 Sin(θ＝180) DataSheet 0.01 0A 0V t T Io VR D=t/T VR=30V Tj=150℃ 0.008 REVERSE POWER DISSIPATION:PR (W) 0.006 DC D=1/2 0.004 Sin(θ＝180) 0.002 0 0 10 20 30 40 50 60 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 0 25 50 75 100 125 150 100 125 150 AMBIENT TEMPERATURE:Ta(℃) DERATING CURVE (Io-Ta) CASE TEMPARATURE:Tc(℃) DERATING CURVE (Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:4.10kV ESD DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/3 2012.03 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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