RB168M150

Data Sheet Schottky Barrier Diode RB168M150 Applications General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 1.2 0.85 2.6±0.1 3.5±0.2 Features 1)Small power mold type. (PMDU) 2)High reliability PMDU Construction Silicon epitaxial planer Structure 0 .9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 3.5±0.05 1.75±0.1 0.25±0.05 8.0±0.2 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 1.5MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Business frequence, R-road, Tc=110°C max. Electrical characteristics (Ta=25°C) Parameter Symbol VF Forward voltage Reverse current IR Limits 150 150 1 30 150 - 55 to +150 Unit V V A A °C °C Min. - Typ. 0.76 0.11 Max. 0.84 20 Unit V μA IF=1A VR=150V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.09 - Rev.A 3.05 ① RB168M150 　 Data Sheet 1 Ta=150°C FORWARD CURRENT:IF(A) REVERSE CURRENT:IR(µA) 1000 Ta=150°C Ta=125°C 100 Ta=125°C Ta=75°C 0.1 10 Ta=75°C 1 Ta=25°C 0.1 Ta=25°C Ta=−25°C 0.01 200 400 600 800 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.01 Ta=−25°C 0.001 0.0001 0 50 100 150 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz FORWARD VOLTAGE:VF(mV) 800 Ta=25°C IF=1A n=30pcs 790 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 780 100 770 AVE:756.9mV 760 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 750 VF DISPERSION MAP 200 Ta=25°C VR=150V n=30pcs 150 AVE:106.8nA 120 Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) 115 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 110 105 100 100 AVE:95.0pF 95 50 IR DISPERSION MAP 90 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.09 - Rev.A RB168M150 　 Data Sheet 200 IFSM 8.3ms 8.3ms 1cyc 150 REVERSE RECOVERY TIME:trr(ns) 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 175 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 125 15 AVE:7.8ns 10 100 AVE:78.0A 75 5 50 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 IFSM t 1cyc 100 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 100 FORWARD POWER DISSIPATION:Pf(W) 1.5 1 Rth(j-c) 10 Sin(θ＝180) DC 0.5 D=1/2 1 0.1 0.001 0 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.09 - Rev.A RB168M150 　 Data Sheet 2 2 DC 0A 0V t T Io VR D=t/T VR=75V Tj=150°C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 1.5 D=1/2 1 1 D=1/2 Sin(θ＝180) 0.5 Sin(θ＝180) 0.5 0 0 50 100 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 0 0 50 100 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 5 ELECTROSTATIC DISCHARGE TEST ESD(KV) 4 3 2 AVE:1.18kV AVE:0.62kV 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.09 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A