RB168VWM100TFTR

RB168VWM100TF Schottky Barrier Diode (AEC-Q101 qualified) Data sheet 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ● Outline VR 100 V Io 1 A IFSM 25 A 　 　 　 　 　 　 　 　 　 　 　 　 　　　 ● Features ● Inner Circuit High reliability Small power mold type Ultra low IR ● Application ● Packaging Specifications Packing Embossed Tape Reel Size(mm) 180 Taping Width(mm) 8 Quantity(pcs) 3000 Taping Code TR Marking KB General rectification ● Structure Silicon epitaxial planar ● Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage V RM VR Duty≦0.5 Reverse direct voltage 100 100 V V Average rectified forward current Io Glass epoxy mounted、 60Hz half sin waveform、resistive load、 Tc=156℃ Max. 1 A Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 25 A Junction temperature(1) Storage temperature Tj Tstg - 175 -55 ～ 175 ℃ ℃ Note(1) To avoid occurrence of thermal runaway ， actual board is to be designed to fulfill dPd/dTj