RB201A60

RB201A60 Diodes Schottky barrier diode RB201A60 Applications General rectification External dimensions (Unit : mm) CATH O D E　 B AN D (BLUE) φ 0 .6 ± 0 .1 Features 1) Cylindrical mold type.(MSR) 2) Low VF. 3) High ESD. ROHM : MSR ① 2 9± 1 3.0 ± 0.2 ① ② 3 2 9±1 φ2 .5 ±0 .2 ② Manufac tu re Date Construction Silicon epitaxial planar Taping specifications (Unit : mm) IVORY H2 BLUE A E H2 記号 Mark Ａ St andard dimension 寸法規格値(mm) value (mm) B C T-31 52.4±1.5 T-32 26.0+0.4 -0 Ｂ 5.0±0.5 Ｃ 0.5ＭＡＸ Ｄ 0 Ｅ 50.4±0.4 Ｆ 0.3ＭＡＸ H1 6.0±0.5 H2 5.0±0.5 L1-L2 0.6ＭＡＸ ＊H1(6mm)：BROWN L1 H1 F L2 H1 D c f : c um ulat iv の許容 t oleranc e w t h 20 pit m以下と±1. 5 注)　累積ピッチe pit c h差は20ピッチiで±1.5mc h t han する m m Absolute maximum ratings (Ta=25°C) Param eter Sym bol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak （t=100µs） Junction tem perature Tj Storage tem perature Tstg Lim its 60 60 2 40 150 -55 to +150 Unit V V A A ℃ ℃ (*1) Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Param eter Sym bol Forward voltage Reverse current VF IR Min. - Typ. - Max. 0.58 100 Unit V µA Conditions IF=2.0A VR=60V Rev.A 1/3 RB201A60 Diodes Electrical characteristic curves (Ta=25°C) 10000 Ta=75℃ 100000 Ta=125℃ Ta=150℃ 100 Ta=-25℃ 10 Ta=25℃ 10000 Ta=150℃ Ta=125℃ 1000 f=1MHz f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 1000 1000 100 10 1 0.1 0.01 Ta=75℃ Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 1 0.1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 560 100 Ta=25℃ IF=2A n=30pcs 90 Ta=25℃ VR=60V n=30pcs 380 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 550 REVERSE CURRENT:IR(uA) 80 70 60 50 40 30 20 10 AVE:7.24uA 360 340 320 300 280 260 240 220 200 AVE:316.3pF Ta=25℃ f=1MHz VR=0V n=30pcs 540 AVE:541.7mV 530 520 510 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 100 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 Ifsm 1cyc 8.3ms 25 20 15 10 5 0 AVE:9.5ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 90 80 70 60 50 40 30 20 10 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 0 Ifsm 8.3ms 8.3ms 1cyc AVE:66.0A IFSM DISRESION MAP 150 Ifsm 10000 trr DISPERSION MAP Mounted on epoxy board IF=0.5A IM=1mA time(ms) td=300us 3 PEAK SURGE FORWARD CURRENT:IFSM(A) t 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 100 Rth(j-l) 10 Rth(j-c) 50 FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) 2 Sin(θ＝180) D=1/2 DC 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0 0.01 0.1 1 10 1 00 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 1 2 3 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 4 5 Rev.A 2/3 RB201A60 Diodes 1 0.9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 5 0A 0V DC 3 D=1/2 t T Io VR D=t/T VR=30V Tj=150℃ 0.8 REVERSE POWER DISSIPATION:PR (W) 4 DC D=1/2 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 60 Sin(θ＝180) D=1/2 DC 0A 0V Io t T VR D=t/T VR=30V Tj=150℃ 4 3 2 2 Sin(θ＝180) 1 1 Sin(θ＝180) 0 0 25 50 75 10 0 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 150 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:5.50kV ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1