RB205T-40_11

Data Sheet Schottky barrier diode RB205T-40 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability (1) (2) (3) 4 Construction Silicon epitaxial planer 205 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 15 100 150 40 to 150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=125C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.55 300 2 Unit V A C/W Conditions IF=7.5A VR=40V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.D RB205T-40 Electrical characteristic curves 10 Ta=150℃ 1000000 100000 　 Data Sheet Ta=150℃ Ta=125℃ 10000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ 1 Ta=75℃ Ta=25℃ 0.1 Ta=-25℃ 10000 1000 100 10 1 0.1 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 520 200 Ta=25℃ IF=7.5A n=30pcs Ta=25℃ VR=40V n=30pcs 1650 1640 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) 150 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 510 1630 1620 1610 1600 1590 1580 1570 1560 1550 AVE:1619.8pF 500 100 490 50 480 AVE:492.2mV 470 0 AVE:35.9uA VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:I FSM(A) 200 150 100 50 0 8.3ms 20 15 10 5 0 trr DISPERSION MAP PEAK SURGE FORWARD CURRENT:I FSM(A) 250 Ifsm 1cyc REVERSE RECOVERY TIME:trr(ns) 25 1cyc 100 AVE:176.0A AVE:20.6ns 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 Ifsm 1cyc 8.3ms 100 100 IM=100mA 20 IF=10A time TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:I FSM(A) 1ms FORWARD POWER DISSIPATION:Pf(W) 10 300us Rth(j-a) 15 D=1/2 10 Sin(θ=180) DC 1 Rth(j-c) 5 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 5 10 15 20 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) cIo-Pf CHARACTERISTICS 25 30 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D RB205T-40 　 Data Sheet 20 18 40 0A 35 0V DC D=1/2 t T Io VR 40 0A 35 0V t 30 25 20 15 10 5 0 Sin(θ=180) D=1/2 DC T Io VR D=t/T VR=20V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 14 12 10 8 6 4 2 0 0 10 20 Sin(θ=180) 30 40 D=1/2 DC 30 25 20 15 10 5 0 0 Sin(θ=180) 25 50 75 100 125 150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 16 D=t/T VR=20V Tj=150℃ 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curve"(Io-Tc) 30 No break at 30kV 25 20 AVE:21.6kV 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A