RB205T-60_11

　 Data Sheet Schottky barrier diode RB205T-60 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability (1) (2) (3) 6 Construction Silicon epitaxial planer 205 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 60 60 15 100 150 40 to 150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=125C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.58 600 2 Unit V A C/W Conditions IF=7.5A VR=60V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.D RB205T-60 Electrical characteristic curves 　 Data Sheet 10 Ta=150C REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) Ta=150C 100000 Ta=125C 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 Ta=25C Ta=-25C Ta=125C Ta=75C 1 Ta=75°C 1000 100 10 1 0.1 0.01 1000 Ta=25C 100 0.1 Ta=-25C 10 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 40 50 60 0 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE : STICS 560 550 Ta=25C IF=7.5A n=30pcs 200 180 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:V F(mV) 160 140 120 100 80 60 40 20 AVE:40.6uA Ta=25C VR=60V n=30pcs 1350 1340 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1330 1320 1310 1300 1290 1280 1270 1260 1250 AVE:1290.5pF Ta=25C f=1MHz VR=0V n=10pcs 540 530 AVE:537.0mV 520 510 VF DISPERSION MAP 0 IR DISPERSION MAP Ct DISPERSION MAP 300 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) 30 PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm 1cyc 8.3ms 1000 Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 250 200 150 100 50 0 25 20 15 10 5 0 AVE:16.0ns 100 1cyc 10 AVE:168.0A 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 Ifsm 100 t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Mounted on epoxy board IF=7.5A IM=100mA time 300us 20 PEAK SURGE FORWARD CURRENT:I FSM(A) D=1/2 10 1ms FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) DC Sin(180) 100 10 1 Rth(j-c) 10 1 10 TIME : t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 TIME : t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D RB205T-60 　 Data Sheet 5 40 0A Io 0V VR T D=t/T VR=30V Tj=150℃ 40 0A 0V Io VR AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 REVERSE POWER DISSIPATION:PR (W) DC D=1/2 t 30 DC t T 3 D=t/T VR=30V Tj=150℃ 20 D=1/2 20 D=1/2 2 Sin(θ=180) 1 10 Sin(θ=180) 10 Sin(θ=180) 0 0 20 40 60 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE : Ta(C) Derating Curve"(Io-Ta) CASE TEMPARATURE : Tc(C) Derating Curve"(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 AVE:15.6kV 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A