RB205T-90_11

　 Data Sheet Schottky barrier diode RB205T-90 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability (1) (2) (3) 9 Construction Silicon epitaxial planer 205 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 15 100 150 40 to 150 Unit V V A A C C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=121C Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.78 300 2 Unit V A C/W Conditions IF=7.5A VR=90V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.E RB205T-90 Electrical characteristic curves 10 Ta=150℃ 100000 10000 　 Data Sheet Ta=150℃ Ta=125℃ 1000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) 1 Ta=75℃ Ta=25℃ Ta=-25℃ 1000 100 10 1 0.1 0.01 Ta=-25℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125℃ Ta=75℃ 100 0.1 10 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 770 Ta=25℃ IF=7.5A n=30pcs 200 180 Ta=25℃ VR=90V n=30pcs 900 890 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 760 160 140 120 100 80 60 40 20 0 AVE:25.4uA 880 870 860 850 840 830 820 810 800 AVE:850.3pF 750 740 730 AVE:735.7mV 720 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm 200 150 100 50 0 IFSM DISPERSION MAP 8.3ms 1cyc 20 15 10 5 0 trr DISPERSION MAP AVE:12.4ns PEAK SURGE FORWARD CURRENT:I FSM(A) 250 25 1cyc 100 AVE:157.0A 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 100 30 IM=100mA TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IF=7.5A 25 time Rth(j-a) PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm t FORWARD POWER DISSIPATION:Pf(W) 1ms DC 20 Sin(θ=180) 15 10 5 D=1/2 10 300us 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 25 30 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.E RB205T-90 　 Data Sheet 5 40 35 0A 0V DC t T D=1/2 Io 40 35 0A 0V D=1/2 DC t T Io VR D=t/T VR=45V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 30 25 20 15 10 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 VR D=t/T VR=45V Tj=150℃ REVERSE POWER DISSIPATION:PR (W) D=1/2 3 DC 30 25 20 15 10 5 0 2 Sin(θ=180) 1 Sin(θ=180) Sin(θ=180) 0 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curve"(Io-Ta) 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curve"(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 AVE:11.6kV 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A