RB215T-40_1

RB215T-40 Diodes Schottky barrier diode RB215T-40 Applications Switching power supply External dimensions (Unit : mm) 4 .5±0.3 　　　 0 .1 Structure ① 1.2 1.3 0.8 (1) ( 2) (3) 13.5MIN Construction Silicon epitaxial planar 5.0±0.2 8 .0±0.2 12 .0 ±0 .2 Features 1) Cathode common dual type. (TO-220) 2) Low IR 3) High reliability 10 .0 ±0 .3 　　　 0 .1 2.8 ±0.2 　　　 0 .1 15.0±0.4 　 0 .2 8.0 0.7 ±0.1 0 .0 5 2 .6±0.5 ROHM : ＴO220FN ① Man u fac tu re Date Absolute maximum ratings (Ta=25°C) Param eter Forward voltage (repetitive peak) Forward voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction tem perature Storage tem perature (*1)Tc=100℃m ax Per chip : Io/2 Sym bol VRM VR Io IFSM Tj Tstg Lim its 45 40 20 100 150 -40 to +150 Unit V V A A ℃ ℃ Electrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. Typ. Max. 0.55 500 1.75 Unit V µA ℃/W Conditions IF=10A VR=40V junction to case Rev.C 1/3 RB215T-40 Diodes Electrical characteristic curves 10 Ta=150℃ 1000000 Ta=150℃ Ta=125℃ 10000 f=1MHz REVERSE CURRENT:IR(uA) 100000 10000 1000 100 10 1 0.1 Ta=25℃ Ta=-25℃ Ta=75℃ FORWARD CURRENT:IF(A) Ta=125℃ 1 Ta=75℃ Ta=25℃ 0.1 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 10 0.01 0 100 200 3 00 40 0 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 35 40 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 500 1000 2550 Ta=25℃ VR=40V n=30pcs 2540 2530 2520 2510 2500 2490 2480 2470 2460 2450 AVE:2515.6pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 490 480 470 460 AVE:472.9mV 450 VF DISPERSION MAP 700 600 500 400 300 200 100 0 AVE:78.7uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=3A n=30pcs 900 800 IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 25 20 15 10 5 0 AVE:27.4ns PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 AVE:176.0A 0 IFSM DISRESION MAP 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 Ifsm 100 30 IM=100mA IF=10A t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 300us Mounted on epoxy board Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 1ms time 20 D=1/2 Sin(θ＝180) 10 DC 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 40 Rev.C 2/3 RB215T-40 Diodes 10 50 50 0A 0V D=1/2 DC Io t T VR D=t/T VR=20V Tj=150℃ 40 D=1/2 30 20 10 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 0A 0V DC Io t T VR D=t/T VR=20V Tj=150℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 6 D=1/2 4 Sin(θ＝180) 2 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC 30 20 10 0 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 40 REVERSE POWER DISSIPATION:PR (W) Sin(θ＝180) 25 50 75 100 1 25 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) 150 30 25 No break at 30kV AVE:25.7kV 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ELECTROSTATIC DISCHARGE TEST ESD(KV) ESD DISPERSION MAP Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1