RB215T-40_11

Data Sheet Schottky barrier diode RB215T-40 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common dual type.(TO-220) 2) Low IR 3) High reliability (1) (2) (3) 4 Construction Silicon epitaxial planar 215 Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz/1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequencies, 1/2 Io per diode, Tc=121C Absolute maximum ratings (Ta=25C) Parameter Limits 45 40 20 100 150 40 to 150 Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.55 500 1.75 Unit V μA C/W Conditions IF=10A VR=40V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.E RB215T-40 Electrical characteristics curves 　 Data Sheet 10 Ta=150 C 1000000 100000 Ta=150 C Ta=125 C 10000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) Ta=125 C 1 Ta=75 C Ta=25 C 0.1 Ta=-25 C 10000 1000 100 10 1 0.1 Ta=75 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Ta=25 C Ta=-25 C 100 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 500 1000 Ta=25 C IF=3A n=30pcs 900 2550 Ta=25 C VR=40V n=30pcs 2540 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 490 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 0 AVE:78.7uA 2530 2520 2510 2500 2490 2480 2470 2460 2450 AVE:2515.6pF 480 470 460 AVE:472.9mV 450 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 Ifsm 1cyc 8.3ms 1000 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) 200 150 100 50 AVE:176.0A 0 20 15 10 5 0 AVE:27.4ns PEAK SURGE FORWARD CURRENT:I FSM(A) 250 25 1cyc 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 trr DISPERSION MAP IFSM DISPERSION MAP 1000 Ifsm t 100 30 IM=100mA TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) IF=10A time PEAK SURGE FORWARD CURRENT:I FSM(A) 1ms 10 300us Mounted on epoxy board Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 20 D=1/2 Sin(=180) 10 DC 100 1 Rth(j-c) 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 40 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.E RB215T-40 　 Data Sheet 10 50 0A Io 0V D=1/2 30 DC VR T D=t/T VR=20V Tj=150 C 50 0A 0V t T Io VR D=t/T VR=20V Tj=150 C 40 t AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 40 D=1/2 30 DC REVERSE POWER DISSIPATION:PR (W) 6 D=1/2 4 Sin(=180) DC 20 20 2 10 Sin(=180) 10 Sin(=180) 0 0 10 20 30 40 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:25.7kV 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A