RB215T-60_11

Data Sheet Schottky barrier diode RB215T-60 Applications Switching power supply Dimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Structure ① 1.3 0.8 (1) (2) (3) 13.5MIN Construcion Silicon epitaxal planar 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 8.0 Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) (*1) Junction temperature Storage temperature Limits Symbol 60 VRM 60 VR 20 Io 100 IFSM 150 Tj 40 to 150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=116C Absolute maximum ratings (Ta=25C) Parameter Unit V V A A C C Elecrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR  jc Min. - Typ. - Max. 0.58 600 1.75 Unit V μA C/W Conditions IF=10A VR=60V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C RB215T-60 Electrical characteristics curves 　 Data Sheet 10 Ta=150 C 1000000 100000 Ta=150 C Ta=125 C 10000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) Ta=125 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 Ta=75 C Ta=-25 C Ta=25 C 10000 1000 1000 Ta=75 C Ta=25 C 100 100 10 1 Ta=-25C 0.1 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 60 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 540 FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) Ta=25C IF=10A n=30pcs 1000 900 800 700 600 500 400 300 200 100 AVE:140.7uA Ta=25 C VR=30V n=30pcs 2000 Ta=25 C f=1MHz VR=0V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 530 1900 520 1800 510 AVE:515.0mV 1700 500 1600 AVE:1704.1pF 490 VF DISPERSION MAP 0 1500 IR DISPERSION MAP Ct DISPERSION MAP 300 30 Ifsm 1cyc 8.3ms 1000 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:I FSM(A) PEAK SURGE FORWARD CURRENT:I FSM(A) 250 200 150 100 50 0 25 20 15 10 5 0 trr DISPERSION MAP 100 8.3ms 8.3ms 1cyc 10 AVE:166.0A AVE:23.3ns 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP 1000 100 Ifsm t Mounted on epoxy board IF=5A IM=100mA 30 TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) PEAK SURGE FORWARD CURRENT:I FSM(A) time 10 1ms FORWARD POWER DISSIPATION:Pf(W) 300us Rth(j-a) D=1/2 20 Sin(=180) DC 100 1 Rth(j-c) 10 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 0.1 1 10 100 1000 0 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 40 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C RB215T-60 　 Data Sheet 15 50 0A Io 0V t DC 30 D=1/2 20 T VR D=t/T VR=30V Tj=150 C 50 0A 0V t Io VR T D=t/T VR=30V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 40 40 DC 30 D=1/2 20 REVERSE POWER DISSIPATION:PR (W) 10 D=1/2 DC 5 Sin(=180) 10 Sin(=180) 10 Sin(=180) 0 0 0 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 AVE:7.50kV 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A