RB215T-90

Schottky barrier diode RB215T-90 Applications General rectification (Common cathode dual chip) Dimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Structure 8.0±0.2 12.0±0.2 Features 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability 1.2 1.3 ① (1) (2) (3) 15.0±0.4 　 0.2 13.5MIN Construction Silicon epitaxial planar 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Limits Symbol Reverse voltage (repetitive) 90 VRM Reverse voltage (DC) 90 VR Average rectified forward current(*1) 20 Io Forward current surge peak (60Hz/1cyc) (*1) 100 IFSM Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=110C Absolute maximum ratings (Ta=25C) Parameter 5.0±0.2 8.0 Unit V V A A C C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. - Typ. - Max. 0.75 400 1.75 Unit V μA C/W Conditions IF=10A VR=90V junction to case www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2010.03 - Rev.D 1/3 RB215T-90 Electrical characteristics curves 100 1000000 100000 　 Data Sheet Ta=150 C Ta=125 C 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 FORWARD CURRENT:IF(A) 10 REVERSE CURRENT:IR(uA) Ta=150 C Ta=125 C 10000 1000 100 10 Ta=75 C 1 Ta=75 C 0.1 Ta=25 C 0.01 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS Ta=-25 C Ta=25 C 100 Ta=-25 C 1 0.1 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE:V R(V) VR-IR CHARACTERISTICS 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS 720 300 Ta=25 C IF=10A n=30pcs 250 200 150 100 50 0 Ta=25 C VR=90V n=30pcs 1300 1290 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1280 1270 1260 1250 1240 1230 1220 1210 AVE:1257.3pF Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 710 700 690 AVE:692.7mV 680 REVERSE CURRENT:IR(uA) AVE:46.0uA 670 1200 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 250 200 150 AVE:168.0A 100 50 0 Ifsm 1cyc RESERVE RECOVERY TIME:trr(ns) 30 25 20 AVE:21.6ns 15 10 5 0 IFSM DISPERSION MAP Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 100 10 Ifsm 8.3ms 8.3ms 1cyc 1 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) Ifsm t 100 IM=100mA 50 IF=10A 40 DC D=1/2 30 Sin(=180) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 time 300us Rth(j-a) 100 FORWARD POWER DISSIPATION:Pf(W) 1ms 1 Rth(j-c) 20 10 10 1 10 TIME:t(s) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.03 - Rev.D RB215T-90 　 Data Sheet 30 60 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 50 40 D=1/2 30 20 10 0 0 10 20 30 40 50 60 70 80 90 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) DC T 0V t Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=45V Tj=150 C 60 50 40 30 20 10 0 0 25 50 Sin(=180) DC D=1/2 0A 0V t T Io VR D=t/T VR=45V Tj=150 C REVERSE POWER DISSIPATION:PR (W) 20 DC D=1/2 10 Sin(=180) Sin(=180) 0 75 100 125 150 REVERSE VOLTAGE:V R(V) VR-PR CHARACTERISTICS CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 AVE:11.6kV 5 0 C=200pF R=0 C=100pF R=1.5k No Break at 30kV ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.03 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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