RB225NS-40

Data Sheet Schottky Barrier Diode RB225NS-40 lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) lFeatures 1)Cathode common dual type.(LPDS) 2)Low IR RB225 NS40 ① lConstruction Silicon epitaxial planer ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day lStructure ① ②③ lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter Limits Symbol VRM Reverse voltage (repetitive) 40 VR Reverse voltage (DC) 40 Average rectified forward current (*1) 30 Io IFSM Forward current surge peak (60Hz・1cyc) (*1) 100 Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1) 60Hz half sin wave, vesistive load at Tc=70°C. 1/2 Io per diode lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Thermal resistance IR Rth (J-C) Unit V V A A C C Min. - Typ. 0.53 0.08 - Max. 0.63 0.5 2.00 Unit V mA °C/W IF=15A VR=40V Conditions junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A RB225NS-40 　 Data Sheet 100 1000000 Ta=150°C 100000 REVERSE CURRENT:IR(mA) Ta=150°C Ta=125°C FORWARD CURRENT:IF(A) 10 Ta=125°C Ta=75°C 1 Ta=25°C 10000 1000 100 10 1 0.1 Ta=75°C Ta=25°C 0.1 Ta=-25°C Ta=-25°C 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10000 f=1MHz 560 Ta=25°C IF=15A n=30pcs 1000 FORWARD VOLTAGE:VF(mV) 550 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 540 530 AVE:534.5mV 520 100 10 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 510 VF DISPERSION MAP 1000 900 REVERSE CURRENT:IR(mA) 800 700 600 500 400 300 200 100 0 IR DISPERSION MAP AVE:78.7mA Ta=25°C VR=40V n=30pcs 2550 2540 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 2530 2520 2510 2500 AVE:2515.6pF 2490 2480 2470 2460 2450 Ct DISPERSION MAP Ta=25°C f=1MHz VR=0V n=10pcs www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RB225NS-40 　 Data Sheet 300 1cyc 250 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 200 50 45 REVERSE RECOVERY TIME:trr(ns) 40 35 30 25 20 15 10 5 AVE:27.4ns Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 150 AVE:176.0A 100 50 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 IFSM time 8.3ms 8.3ms 1cyc. 100 100 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 50 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 40 10 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) D=1/2 30 20 Sin(θ＝180) DC 1 Rth(j-c) 10 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RB225NS-40 　 Data Sheet 10 50 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 40 D=1/2 30 D.C. 6 D=1/2 DC 4 Sin(θ＝180) 20 0A 10 0V t T Io VR D=t/T VR=20V Tj=150°C 75 100 125 150 Sin(θ＝180) 2 0 0 10 20 30 40 0 0 25 50 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:25.7kV 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A