RB225T-40

Schottky Barrier Diode RB225T-40 Applications Switching power supply Dimensions(Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3)  Structure ① 1.3 0.8 (1) (2) (3) 13.5MIN 13.5Min. 0.7±0.1 0.05 Construction Silicon epitaxial planer 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 8.0 Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak （60Hz・1cyc）(*1) Junction temperature Storage temperature (*1)Tc=105Cmax Per chip:Io/2 Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance ( ) : tentative Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 30 100 150 -40 to +150 Unit V V A A C C Symbol VF IR θjc Min. - Typ. - Max. 0.63 500 (1.75) Unit V μA C/W Conditions IF=15A VR=40V junction to case www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.01 - Rev.A RB225T-40 　 Data Sheet Electrical characteristic curves 100 Ta=150 C REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 10 Ta=125 C Ta=75 C 1 Ta=25 C Ta=-25 C 0.1 1000000 100000 10000 1000 Ta=150 C Ta=125 C 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Ta=75 C Ta=25 C 100 100 10 1 Ta=-25 C 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 560 1000 Ta=25 C IF=15A n=30pcs 900 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 0 AVE:78.7uA Ta=25 C VR=40V n=30pcs 2550 2540 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 2530 2520 2510 2500 2490 2480 2470 2460 2450 AVE:2515.6pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 550 540 530 520 AVE:534.5mV 510 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) 1000 50 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 45 40 35 30 25 20 15 10 5 0 IFSM DISPERSION MAP trr DISPERSION MAP 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 AVE:27.4ns Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 8.3ms 1cyc 100 AVE:176.0A 0 1000 TRANSIENT ℃ THAERMAL IMPEDANCE:Rth ( /W) Ifsm t 100 IM=100mA 50 IF=10A 40 300us Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) time D=1/2 PEAK SURGE FORWARD CURRENT:IFSM(A) 1ms 10 Mounted on epoxy board 30 Sin(=180) DC 100 20 1 Rth(j-c) 10 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.1 10 1000 0 10 TIME:t(s) Rth-t CHARACTERISTICS 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 50 www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.01 - Rev.A RB225T-40 　 Data Sheet 10 50 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io t T AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=20V Tj=150 C 50 8 REVERSE POWER DISSIPATION:PR (W) D=1/2 40 DC 0V 40 D=1/2 30 DC 6 D=1/2 4 Sin(=180) 2 DC 30 Sin(=180) 20 20 0A 0V 10 Io t T VR D=t/T VR=20V Tj=150 C 10 Sin(=180) 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:25.7kV 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.01 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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