RB225T-40_11

Data Sheet Schottky Barrier Diode RB225T-40 Applications Switching power supply Dimensions(Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3)  Structure ① 1.3 0.8 (1) (2) (3) 13.5MIN 13.5Min. Construction Silicon epitaxial planer 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 8.0 Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak （60Hz・1cyc）(*1) Junction temperature Storage temperature (*1)Tc=105Cmax Per chip:Io/2 Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance ( ) : tentative Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 30 100 150 40 to 150 Unit V V A A C C Symbol VF IR θjc Min. - Typ. - Max. 0.63 500 (1.75) Unit V μA C/W Conditions IF=15A VR=40V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.A RB225T-40 Electrical characteristic curves Data Sheet 100 Ta=150 C 1000000 100000 Ta=150 C Ta=125 C 10000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) 10 Ta=125 C Ta=75 C 10000 1000 100 10 1 0.1 Ta=75 C 1 Ta=25 C Ta=-25 C CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 Ta=25 C Ta=-25 C 100 0.1 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 560 1000 Ta=25 C IF=15A n=30pcs 900 Ta=25 C VR=40V n=30pcs 2550 2540 Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 550 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 0 AVE:78.7uA 2530 2520 2510 2500 2490 2480 2470 2460 2450 AVE:2515.6pF 540 530 520 AVE:534.5mV 510 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 1000 50 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 40 35 30 25 20 15 10 5 0 AVE:27.4ns PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm 1cyc 8.3ms 45 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 AVE:176.0A 0 IFSM DISPERSION MAP 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 Ifsm t 100 50 IM=100mA TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IF=10A time Rth(j-a) 40 D=1/2 PEAK SURGE FORWARD CURRENT:I FSM(A) 1ms 10 300us FORWARD POWER DISSIPATION:Pf(W) Mounted on epoxy board Rth(j-c) 30 Sin(=180) DC 100 20 1 10 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A RB225T-40 Data Sheet 10 50 0A Io t T D=1/2 DC 0V VR D=t/T VR=20V Tj=150 C 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 40 40 REVERSE POWER DISSIPATION:PR (W) D=1/2 30 DC 6 D=1/2 4 Sin(=180) DC 30 Sin(=180) 20 20 0A 10 Io t T VR D=t/T VR=20V Tj=150 C 2 10 0V Sin(=180) 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:25.7kV 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A