RB225T-60

Schottky barrier diode RB225T-60 Applications  Dimensions (Unit : mm) Switching power supply 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Structure 1.2 1.3 5.0±0.2 Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability (1) (2) (3) 8.0±0.2 12.0±0.2 15.0±0.4 　 0 .2 13.5MIN ① Construction Silicon epitaxial planar 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Limits Symbol 60 VRM Reverse voltage (repetitive peak) Reverse voltage (DC) 60 VR 30 Average rectified forward current(*1) Io 100 IFSM Forward current surge peak (60Hz/1cyc) (*1) Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=108C Electrical characteristic (Ta=25C) Parameter Forward characteristics Reverse characteristics Thermal impedance Absolute maximum ratings (Ta=25C) Parameter 8.0 Unit V V A A C C Symbol VF IR jc Min. - Typ. - Max. 0.63 600 1.75 Unit V μA C/W Conditions IF=15A VR=60V junction to case www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.C RB225T-60 Electrical characteristic curves 　 Data Sheet 100 Ta=150 C 10 Ta=125 C Ta=-25 C Ta=25 C 0.1 Ta=75 C 1000000 100000 REVERSE CURRENT:IR(uA) Ta=150 C Ta=125 C 10000 f=1MHz FORWARD CURRENT:IF(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10000 1000 Ta=75 C Ta=25 C 1000 1 100 100 10 1 Ta=-25 C 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 700 0.1 0 10 20 30 40 50 REVERSE VOLTAGE:V R(V) VR-IR CHARACTERISTICS 60 1 0 5 10 15 20 REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS 25 30 600 Ta=25 C IF=15A n=30pcs 500 450 REVERSE CURRENT:IR(uA) 400 350 300 250 200 150 100 50 0 AVE:70.1uA Ta=25 C VR=60V n=30pcs 2200 2150 2100 2050 2000 1950 AVE:2030.9pF 1900 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) 580 570 560 AVE:580.0mV 550 VF DISPERSION MAP IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 590 Ct DISPERSION MAP 300 RESERVE RECOVERY TIME:trr(ns) Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 250 8.3ms 200 150 AVE:176.0A 100 50 0 1cyc 30 25 20 15 10 AVE:23.3ns 5 0 trr DISPERSION MAP IFSM DISPERSION MAP Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1000 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 8.3ms 1cyc 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1000 100 IM=100mA 50 IF=10A 40 1ms PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) DC D=1/2 tim Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 30 Sin(=180) 20 10 300us 100 1 Rth(j-c) 10 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 10 20 30 40 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.C RB225T-60 　 Data Sheet 30 25 REVERSE POWER DISSIPATION:PR (W) 20 Sin(=180) 15 D=1/2 10 5 0 0 10 20 30 40 50 60 DC 80 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 60 50 D=1/2 40 30 20 10 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) 150 Sin(=180) DC 0A 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=30V Tj=150 C 80 70 60 DC 50 40 30 Sin(=180) 20 10 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) D=1/2 T 0A 0V t Io VR D=t/T VR=30V Tj=150 C REVERSE VOLTAGE:V R(V) VR-PR CHARACTERISTICS 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k AVE:18.5kV www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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