RB225T-60_11

Data Sheet Schottky barrier diode RB225T-60 Applications  Dimensions (Unit : mm) Switching power supply 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Structure ① 1.3 0.8 (1) (2) (3) 13.5MIN Construction Silicon epitaxial planar 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 8.0 Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 10.0±0.3 　　　 0.1 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Limits Symbol 60 VRM Reverse voltage (repetitive peak) Reverse voltage (DC) 60 VR 30 Average rectified forward current(*1) Io 100 IFSM Forward current surge peak (60Hz/1cyc) (*1) Junction temperature 150 Tj Storage temperature 40 to 150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=108C Electrical characteristic (Ta=25C) Parameter Forward characteristics Reverse characteristics Thermal impedance Absolute maximum ratings (Ta=25C) Parameter Unit V V A A C C Symbol VF IR jc Min. - Typ. - Max. 0.63 600 1.75 Unit V μA C/W Conditions IF=15A VR=60V junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C RB225T-60 Electrical characteristic curves 　 Data Sheet 100 1000000 100000 Ta=150 C Ta=125 C 10000 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=150 C 10 Ta=125 C 1 Ta=-25 C Ta=25 C 0.1 Ta=75 C 10000 1000 100 10 1 Ta=75C Ta=25 C 1000 100 Ta=-25 C 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 700 0.1 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 60 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 600 Ta=25 C IF=15A n=30pcs 500 450 Ta=25 C VR=60V n=30pcs 2200 2150 2100 2050 2000 1950 1900 Ta=25 C f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:V F(mV) REVERSE CURRENT:IR(uA) 350 300 250 200 150 100 50 0 AVE:70.1uA 580 570 560 AVE:580.0mV 550 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 590 400 AVE:2030.9pF VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:I FSM(A) 200 150 AVE:176.0A 100 50 0 8.3ms 20 15 10 AVE:23.3ns 5 0 PEAK SURGE FORWARD CURRENT:I FSM(A) 250 REVERSE RECOVERY TIME:trr(ns) Ifsm 1cyc 25 100 1cyc 10 1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 trr DISPERSION MAP IFSM DISPERSION MAP 1000 100 IM=100mA 50 IF=10A 40 1ms PEAK SURGE FORWARD CURRENT:I FSM(A) Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth ( C/W) 10 300us Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) time DC D=1/2 30 Sin(=180) 20 100 1 Rth(j-c) 10 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 1 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 100 1000 0 0 10 20 30 40 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C RB225T-60 　 Data Sheet 30 25 80 70 0A 0V t DC T Io 80 70 0A 0V DC 50 40 30 20 10 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta( C) Derating Curve"(Io-Ta) CASE TEMPARATURE:Tc( C) Derating Curve"(Io-Tc) Sin(=180) D=1/2 T t Io VR D=t/T VR=30V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 60 50 40 30 20 10 Sin(=180) D=1/2 VR D=t/T VR=30V Tj=150 C AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 60 20 Sin(=180) 15 D=1/2 10 5 0 0 10 20 30 40 50 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC 0 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0 ESD DISPERSION MAP C=100pF R=1.5k AVE:18.5kV www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A