RB225T100

Schottky barrier diode RB225T100 Dimensions (Unit : mm) Applications Switching power supply Structure 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 10.0±0.3 　　　 0.1 Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 13.5MIN 1.2 1.3 Construction Silicon epitaxial planar 15.0±0.4 　 0.2 8.0±0.2 12.0±0.2 5.0±0.2 ① 8.0 (1) (2) (3) 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Limits Symbol 110 VRM Reverse voltage (repetitive peak) Reverse voltage (DC) 110 VR 30 Average rectified forward current(*1) Io 100 I Forward current surge peak (60Hz/1cyc) (*1) FSM Junction temperature 150 Tj Storage temperature -40 to +150 Tstg (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=99C Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. Symbol VF Min. - Typ. - Unit V V A A C C Max. 0.86 Unit V IR - - 400 μA  jc - - 1.75 C/W 1/3 Conditions IF=15A VR=100V junction to case 2010.02 - Rev.C 　 RB225T100 Data Sheet Electrical characteristics curves 100 Ta=150C 10000 10000 Ta=125C f=1MHz 条件：f=1MHz Ta=125C 1 Ta=25C Ta=75C 0.1 Ta=-25C 0.01 100 Ta=75C 10 Ta=25C 1 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1000 Ta=150C 10 0.1 Ta=-25C 0.01 100 10 0.001 0.0001 0.001 0 1 0 100 200 300 400 500 600 700 800 900 0 760 750 AVE:752.6mV 740 Ta=25C VR=100V n=30pcs 900 800 700 600 500 400 AVE:478.3nA 300 200 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) Ta=25C IF=15A n=30pcs Ta=25C f=1MHz VR=0V n=10pcs 1800 1700 1600 AVE:1914.5pF 0 730 1500 VF DISPERSION MAP IR DISPERSION MAP 300 Ct DISPERSION MAP 1000 30 83 8.3ms 200 150 100 50 AVE:237.0A Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 0 5 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm Ifsm 250 RESERVE RECOVERY TIME:trr(ns) 10 1 10 100 TRANSIENT THAERMAL IMPEDANCE:Rth (C/W) Ifsm t 100 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 100 50 Mounted on epoxy board IM=100mA 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP 1000 8.3ms 1cyc 1 IFSM DISPERSION MAP 1 8.3ms 100 AVE:24.3pF 0 45 IF=10A 40 1ms 10 tim Rth(j-a) 300us Rth(j-c) 1 FORWARD POWER DISSIPATION:Pf(W) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 1900 100 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 2000 1000 780 770 10 REVERSE VOLTAGE:V R(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE:V R(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:V F(mV) 10 20 30 40 50 60 70 80 90 100 D=1/2 35 30 Sin(=180) 25 20 DC 15 10 5 0.1 0.001 0 0.01 0.1 1 10 TIME:t(ms) Rth-t CHARACTERISTICS 2/3 100 1000 0 5 10 15 20 25 30 35 40 45 50 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 2010.02 - Rev.C 　 RB225T100 0.1 70 0.06 D=1/2 Sin(=180) 0.04 DC 0.02 0A 60 0V 50 D=1/2 40 T DC D=t/T VR=50V Tj=150C 30 20 5 10 15 20 REVERSE VOLTAGE:V R(V) VR-PR CHARACTERISTICS Io 0V VR t DC T 50 D=t/T VR=50V Tj=150C D=1/2 40 30 Sin(=180) 20 10 Sin(=180) 0 0 0A 60 VR t 10 0 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 70 0.08 REVERSE POWER DISSIPATION:PR (W) Data Sheet 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 AVE:20.5kV 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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