RB228NS100TL

Data Sheet Schottky Barrier Diode RB228NS100 lApplications Switching power supply lDimensions (Unit : mm) lLand size figure (Unit : mm) RB2281 NS100 lFeatures 1)Cathode common type. 2)Low IR 3)High reliability 4)AEC-Q101 qualified ① lConstruction Silicon epitaxial planer lStructure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day ① ② ③ lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Tj Storage temperature Tstg (*1) Rating of per diode : Io/2 lElectrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current Thermal impedance Limits 110 100 30 100 150 Unit V V A A C C -40 to +150 Min. Typ. Max. Unit - - 0.87 V IR - - mA θjc - - 0.15 2.00 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/4 °C/W Conditions IF=5A VR=100V junction to case 2012.08 - Rev.B Data Sheet 　 RB228NS100 1000000 100 Ta=125°C Ta=150°C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A) 100000 Ta=75°C 10 Ta=125°C 1 Ta=150°C 0.1 Ta=25°C 10000 Ta=75°C 1000 Ta=25°C 100 Ta=-25°C 0.01 10 Ta=-25°C 0.001 1 100 200 300 400 500 600 700 800 900 0 10 20 30 40 50 60 70 80 1000 770 FORWARD VOLTAGE:VF(mV) f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 90 100 110 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 100 Ta=25°C IF=5A n=30pcs 760 750 740 AVE:731.5mV 730 10 720 0 10 20 30 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 600 Ta=25°C VR=100V n=30pcs 300 AVE:151nA 200 Ta=25°C f=1MHz VR=0V n=10pcs 590 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 400 580 570 560 550 540 530 100 AVE:514.4pF 520 510 500 0 Ct DISPERSION MAP IR DISPERSION MAP www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/4 2012.08 - Rev.B Data Sheet 　 RB228NS100 30 400 350 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 1cyc IFSM 8.3ms 300 AVE:231A 250 200 25 20 15 AVE:8.2ns 10 5 0 trr DISPERSION MAP IFSM DISPERSION MAP 1000 300 IFSM 250 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 8.3ms 1cyc 200 150 100 t 100 10 1 10 100 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 60 100 50 D=1/2 10 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Mounted on epoxy board Rth(j-a) Rth(j-c) 1 40 Sin(θ＝180) 30 20 DC 10 0.1 0.001 0 0.01 0.1 1 10 100 0 1000 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS 3/4 2012.08 - Rev.B Data Sheet 　 RB228NS100 0.02 80 Io 0A 70 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.015 DC 0.01 D=1/2 0.005 Sin(θ＝180) VR t 60 T 50 D=t/T VR=50V Tj=150°C 40 D=1/2 DC 30 20 10 Sin(θ＝180) 0 0 0 10 20 30 40 50 60 70 80 90 100 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 80 30 0A Io 0V VR t 60 T DC 50 40 D=t/T VR=50V Tj=150°C D=1/2 30 20 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 25 Sin(θ＝180) 20 AVE:10.9kV 15 AVE:3.9kV 10 5 10 0 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 4/4 2012.08 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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