RB228T100

Data Sheet Schottky Barrier Diode RB228T100 Applications Switching power supply Dimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Structure ① 1.3 0.8 (1) (2) (3) 13.5MIN Construction Silicon epitaxial planer 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 8.0 0.7±0.1 0.05 Features 1)Cathode common type. 2)Low IR 3)High reliability 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Limits VRM 110 VR 100 Average rectified forward current (*1) 30 Io IFSM Forward current surge peak (60Hz・1cyc) (*2) 100 Junction temperature 150 Tj Storage temperature 40 to 150 Tstg (*1) Business frequence sin wave, Tc=83°C max. Rating of per diode : lo/2 (*2) per diode Electrical characteristics (Ta=25C) Parameter Symbol Forward voltage Reverse current Thermal impedance VF IR θjc Unit V V A A C C Min. - Typ. - Max. 0.87 0.15 2.00 Unit V mA °C/W IF=5A VR=100V Conditions junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.12 - Rev.A RB228T100 　 Data Sheet 100 Ta=75°C FORWARD CURRENT:IF(A) Ta=125°C 1 Ta=150°C 1000000 Ta=150°C 100000 REVERSE CURRENT:IR(nA) Ta=125°C 10 10000 Ta=75°C 1000 Ta=25°C 100 Ta=-25°C 0.1 Ta=25°C 0.01 Ta=-25°C 0.001 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 1 0 10 20 30 40 50 60 70 80 90 100 110 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz FORWARD VOLTAGE:VF(mV) 770 Ta=25°C IF=5A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 760 750 100 740 AVE:731.5mV 730 10 0 10 20 30 720 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 Ta=25°C VR=100V n=30pcs 300 600 590 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 580 570 560 550 540 530 520 510 AVE:514.4pF Ta=25°C f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) AVE:151nA 200 100 0 IR DISPERSION MAP 500 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.12 - Rev.A RB228T100 　 Data Sheet 400 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 350 8.3ms 1cyc REVERSE RECOVERY TIME:trr(ns) 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 300 15 AVE:8.2ns 10 AVE:231A 250 5 200 IFSM DISPERSION MAP 0 trr DISPERSION MAP 300 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 8.3ms 8.3ms 400 IFSM 300 t 1cyc 200 200 150 100 100 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 100 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 60 50 D=1/2 FORWARD POWER DISSIPATION:Pf(W) 10 Rth(j-a) 40 30 Sin(θ＝180) 1 Rth(j-c) 20 DC 10 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 10 TIME:t(s) Rth-t CHARACTERISTICS 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 50 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.12 - Rev.A RB228T100 　 Data Sheet 0.02 80 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V t T Io VR D=t/T VR=50V Tj=150°C 0.015 REVERSE POWER DISSIPATION:PR (W) DC 60 50 40 D=1/2 30 20 10 Sin(θ＝180) DC 0.01 D=1/2 0.005 Sin(θ＝180) 0 0 10 20 30 40 50 60 70 80 90 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 80 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) DC 0A 0V t T Io VR D=t/T VR=50V Tj=150°C ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 25 20 AVE:10.9kV D=1/2 15 10 AVE:3.9kV 5 Sin(θ＝180) 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.12 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A