RB400D_11

Data Sheet Schottky Barrier Diode RB400D  Applications Low current rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 1.9 2.8±0.2 1.6－0.1  Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.4 　－0.05 (3) ＋0.2 1.0MIN. 0.15 －0.06 ＋0.1 0.95 0.8MIN. 0～0.1 (2) (1) 0.95 1.9±0.2 0.8±0.1 1.1±0.2 0.01  Construction Silicon epitaxial planer 0.95 0.3～0.6 SMD3  Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 3.2±0.1 3.2±0.1 4.0±0.1 φ1.05MIN 0～0.5 5.5±0.2 3.2±0.1 1.35±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 500 3 125 40 to 125 Unit V V mA A °C °C  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF IR1 IR2 Ct1 Ct2 Min. - Typ. 125 20 Max. 0.55 30 50 - Unit V μA μA pF pF Conditions IF=500mA VR=10V VR=30V VR=0V , f=1MHz VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 2.4 ＋0.1 2.9±0.2 各リードとも Each lead has same dimension 同寸法 RB400D Data Sheet 1000 10000 Ta=75℃ 1000 100 10 Ta=25℃ 1 Ta=-25℃ 0.1 0.01 0 5 10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 40 Ta=125℃ Ta=75℃ 1000 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 100 Ta=125℃ Ta=25℃ 10 Ta=-25℃ 1 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 0.1 0 200 400 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 520 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 510 500 490 480 AVE:495.8mV 470 REVERSE CURRENT:IR(uA) Ta=25℃ IF=0.5A n=30pcs 10 9 8 7 6 5 4 3 2 1 0 AVE:0.510uA Ta=25℃ VR=10V n=30pcs 10 9 8 7 6 5 4 3 2 1 0 IR DISPERSION MAP IR DISPERSION MAP AVE:1.117uA Ta=25℃ VR=25V n=30pcs VF DISPERSION MAP 200 190 180 170 160 150 140 130 120 110 100 AVE:117.5pF Ta=25℃ f=1MHz VR=0V n=10pcs 25 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 24 CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 23 22 21 20 19 18 17 16 15 AVE:20.66pF Ta=25℃ f=1MHz VR=10V n=10pcs 25 20 15 10 5 Ifsm 1cyc 8.3ms AVE:5.30A 0 Ct DISPERSION MAP Ct DISPERSION MAP IFSM DISRESION MAP 30 10 10 Ifsm 8.3ms 8.3ms 1cyc REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 AVE:9.3ns 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 8 6 4 2 0 1 8 6 4 2 0 Ifsm t 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1 trr DISPERSION MAP 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB400D Data Sheet 1000 1 Rth(j-a) 0.02 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 Rth(j-c) Mounted on epoxy board FORWARD POWER DISSIPATION:Pf(W) 0.5 D=1/2 Sin(θ＝180) DC REVERSE POWER DISSIPATION:PR (W) 0.01 Sin(θ＝180) D=1/2 DC 10 IM=1mA IF=10mA 1ms time 300us 1 0.001 0 0.1 10 1000 0 0.2 TIME:t(s) Rth-t CHARACTERISTICS 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1 0 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 20 2 0A 0V Io t T 1 D=1/2 DC VR D=t/T VR=20V Tj=125℃ 2 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 D=1/2 DC 1 0.5 Sin(θ＝180) 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0.5 Sin(θ＝180) 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A