RB400VA-50_11

Data Sheet Schottky Barrier Diode RB400VA-50  Applications General rectification  Dimensions (Unit : mm) 0.17±0.1 　　 0.05 1.3±0.05  Land size figure (Unit : mm) 1.1 1.9±0.1 3) High reliability. 2.5±0.2 TUMD2  Construction Silicon epitaxial planer 0.8±0.05  Structure ROHM : TUMD2 　　　 0.1 dot (year week factory) + day 0.6±0.2  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 1.75±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 3.5±0.05 8.0±0.2 1.43±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 2.75 2.8±0.05 0.9±0.08  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 50 40 0.5 3 125 40 to 125 Unit V V A A °C °C  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF 1 IR1 IR2 Ct1 Ct2 Min. - Typ. 125 20 Max. 0.55 30 50 - Unit V μA μA pF pF IF=500mA VR=10V VR=30V Conditions VR=0V , f=1MHz VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 0.8 0.5  Features 1) Small mold type. (TUMD2) 2) Low VF, Low IR. 2.0 RB400VA-50 Data Sheet 1000 10000 1000 100 10 1 Ta=-25℃ 0.1 0.01 0 200 400 600 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=125℃ 1000 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 100 Ta=125℃ Ta=25℃ 10 Ta=-25℃ 1 Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 100 10 0.1 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 520 10 10 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 510 500 490 480 AVE:495.8mV 470 VF DISPERSION MAP 7 6 5 4 3 2 1 0 IR DISPERSION MAP AVE:0.510uA REVERSE CURRENT:IR(uA) Ta=25℃ IF=0.5A n=30pcs 9 8 Ta=25℃ VR=10V n=30pcs 9 8 7 6 5 4 3 2 1 0 IR DISPERSION MAP AVE:1.562uA Ta=25℃ VR=35V n=30pcs 200 190 Ta=25℃ f=1MHz VR=0V n=10pcs 25 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 170 160 150 140 130 120 110 100 Ct DISPERSION MAP AVE:117.5pF CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 23 22 21 20 19 18 17 16 15 Ct DISPERSION MAP AVE:20.66pF PEAK SURGE FORWARD CURRENT:IFSM(A) 24 Ta=25℃ f=1MHz VR=10V n=10pcs Ifsm 20 1cyc 8.3ms 10 AVE:5.30A 0 IFSM DISRESION MAP 20 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 8 6 4 2 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc 10 8 6 4 2 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 Ifsm t 10 5 AVE:9.3ns 0 trr DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB400VA-50 Data Sheet 1000 Mounted on epoxy board IM=10mA IF=0.2A 1 0.02 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1ms time 300us FORWARD POWER DISSIPATION:Pf(W) Rth(j-a) D=1/2 0.5 Sin(θ＝180) 100 Rth(j-c) DC REVERSE POWER DISSIPATION:PR (W) 0.015 0.01 D=1/2 DC 0.005 Sin(θ＝180) 10 0.001 0 0.01 0.1 1 10 100 1000 0 0.2 TIME:t(s) Rth-t CHARACTERISTICS 2 0A 0V Io 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 DC t T VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 1.5 D=1/2 DC 1 D=1/2 1 0.5 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0.5 Sin(θ＝180) 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A