RB411D

RB411D Diodes Schottky barrier diode RB411D Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm) 1.9 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 　－0.05 (3) 2.8 ±0 .2 1. 6－0.1 ＋0.2 1.0MIN. 0. 15－0.06 ＋0.1 0.95 0.8MIN. 0～ 0.1 0.3～0 .6 SMD3 (2) 0.9 5 0. 95 1.9± 0.2 (1) 0. 8± 0. 1 1.1± 0. 2 0.01 Construction Silicon epitaxial planar Structure ROHM : S MD3 JEDEC :S 0 T-3 46 JEITA : S C-59 we e k c o de Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5 ±0.1 　　　　　 0 1.75±0 .1 0.3±0.1 3 .5±0.05 8.0 ±0.2 3.2 ±0.1 3 .2±0.1 4.0 ±0.1 φ1 .05 MIN 0～0 .5 5.5±0 .2 3 .2±0.1 1.35 ±0 .1 Absolute maximum ratings (Ta = 25°C) Pa ra m e te r R e ve rs e vo l tage (repeti ti ve p eak ) R e ve rs e vo l tage (D C ) Average re c ti fi ed fo rw ard c u rrent（ *1 ） Fo rw ard c u rrent s u rge peak （ 60H z・ 1c yc ）（ *1 ） J unc ti on te m perature S torage te m perature (* 1) R a ti ng of p er d i ode S ym bol VRM VR Io IFSM Tj Ts tg Li m i ts 40 20 500 3 125 -40 to + 125 U n it V V mA A ℃ ℃ Electrical characteristics (Ta = 25°C) Pa ra m e te r Fo rw arad vo l tage R e ve rs e c u rre n t C a pa c i ta nce be tw e e n te rm i n al S ym b o l VF 1 VF 2 IR 1 Ct1 Mi n. Typ . 20 Ma x. 0 .5 0 0 .3 0 30 U nit V V µA pF IF =5 0 0 m A IF =1 0 m A VR =1 0 V VR = 1 0 V , f= 1 MH z C ond i ti o ns Rev.B 2.4 0.4 ＋0.1 2. 9± 0. 2 各リ ード と も Each lead has same dimension 同寸 法 1/3 RB411D Diodes Electrical characteristic curves (Ta = 25°C) 10 0 0 Ta=25℃ Ta=75℃ F ORWARD C U RREN T: IF( mA ) REV ERSE C U R R EN T:IR ( u A) Ta=125℃ CA P A CITA N C E B ETW EEN TER M IN A L S: C t( pF ) 100 1000 Ta= 7 5 ℃ 10000 Ta= 1 2 5 ℃ 100 f= 1 M H z 100 Ta=25℃ 10 10 Ta=-25℃ 10 1 1 Ta=-25℃ 0. 1 0 1 00 200 3 00 400 500 0. 1 0 10 20 R EVER SE V OL TAGE： VR ( V ) VR - IR C H AR AC TER ISTIC S 30 1 0 10 20 R EV ER SE V OL TA GE: V R ( V ) VR - C t C H A R AC TER ISTIC S 30 F OR W AR D V OL TAGE： VF ( m V) VF - IF C H AR AC TER ISTIC S 430 Ta=25℃ IF = 5 0 0 m A n= 30pcs 25 0 Ta=25℃ IF =10m A n=30 pc s 20 18 REV ER SE C U RREN T: IR( u A ) 16 14 12 10 8 6 4 2 0 V F D ISP ER SION M A P IR D ISP ER SION M A P AVE: 4 .6 7 u A Ta=2 5℃ VR= 1 0 V n=30pcs F OR W AR D V OL TAGE: VF ( m V) 410 F OR W AR D V OL TAG E:VF ( m V) 420 24 0 23 0 400 A V E:405.6mV 22 0 390 σ :3.0258mV 21 0 A V E: 218.0m V 20 0 A V E:4 0 2 .4 m V 380 V F D ISP ER SION M A P 25 24 23 C A P A C ITA N C E B ETW EEN TER M IN A L S: C t( pF ) 22 21 20 19 18 17 16 15 Ct D ISP ER SION M A P A V E:18. 35pF Ta=25℃ f= 1 M H z V R =0V n= 10pc s 20 RESERV E R EC OV ERY TIM E: trr( n s) If sm 15 8.3m s 10 1cyc 30 25 20 15 10 5 A V E: 6.20ns 0 IF SM D ISR ESION M A P trr D ISP ER SION M A P Ta= 25℃ IF = 0 .5 A IR = 1 A Irr= 0. 25 *IR n=10pc s PEA K SU R GE FORWARD C U RREN T: IF SM ( A ) 5 A V E:5. 70A 0 10 If sm 8.3m s 8. 3 m s 15 If sm t 10 10 0 0 TR A N SIEN T TH A ER M A L IM P ED A N C E: R th ( ℃ / W ) Rth( j- a) PEA K SU R GE FOR W A R D C U R R EN T:IF SM ( A ) PEA K SU R GE FOR W A R D C U R R EN T:IF SM ( A ) 1cyc 5 100 Rth( j- c) M o u n te d o n e po xy bo ard 10 IM =1m A IF=10m A 5 1m s ti m e 0 1 10 NUM BER OF C YC L ES IF SM - C YC L E C H A R A C TER ISTIC S 100 0 0.1 10 100 TIM E: t( m s) IF SM - t C H A R A C TER ISTIC S 1 1 00 0 30 0u s 1 0. 0 0 1 0 .1 10 TIM E:t( s) Rth - t C H A R A C TER ISTIC S 1000 Rev.B 2/3 RB411D Diodes 0.5 0.2 1.5 0A 0V 1 DC D=1/2 0.5 Sin(θ＝180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 Io t T VR D=t/T VR=10V Tj=125℃ D=1/2 0.3 Sin(θ＝180) 0.2 DC REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.15 0.1 DC 0.05 Sin(θ＝180) D=1/2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1.5 0A 0V t 1 DC D=1/2 0.5 Sin(θ＝180) 0 0 25 50 75 10 0 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) T Io VR D=t/T VR=10V Tj=125℃ 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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