RB411D_11

Data Sheet Schottky Barrier Diode RB411D  Applications Low current rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 1.9  Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. (3) 2.8±0.2 1.6－0.1 ＋0.2 1.0MIN. 0.15 －0.06 ＋0.1 0.95 0.8MIN. 0～ 0.1 0.3～0.6 (2) (1) 0.95 1.9±0.2 0.8±0.1 1.1±0.2 0.01 SMD3  Construction Silicon epitaxial planer 0.95  Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 3.2±0.1 3.2±0.1 4.0±0.1 φ1.05MIN 0～0.5 5.5±0.2 3.2±0.1 1.35±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz / 1cyc)(*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg Limits 40 20 500 3 125 40 to 125 Unit V V mA A °C °C  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF 1 VF 2 IR1 Ct1 Min. - Typ. 20 Max. 0.50 0.30 30 - Unit V V μA pF Conditions IF=500mA IF=10mA VR=10V VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 2.4 2.9±0.2 各 リー ドと も ＋0.1 Each lead has same dimension 同寸 法 0.4 　－0.05 RB411D Data Sheet 1000 Ta=25℃ Ta=75℃ 10000 1000 100 Ta=125℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 100 Ta=125℃ Ta=75℃ 10 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ 10 1 0.1 Ta=-25℃ 10 1 0.1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 30 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 430 250 20 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 420 410 400 390 380 AVE:405.6mV σ:3.0258mV FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=500mA n=30pcs 240 230 220 210 AVE:218.0mV 200 Ta=25℃ IF=10mA n=30pcs 18 16 14 12 10 8 6 4 2 0 AVE:4.67uA Ta=25℃ VR=10V n=30pcs AVE:402.4mV VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 25 20 30 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 24 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 23 22 21 20 19 18 17 16 15 Ct DISPERSION MAP AVE:18.35pF Ta=25℃ f=1MHz VR=0V n=10pcs Ifsm 15 1cyc 8.3ms 25 20 15 10 5 AVE:6.20ns 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 5 AVE:5.70A 0 IFSM DISRESION MAP trr DISPERSION MAP 10 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 15 Ifsm 10 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA t 5 5 10 1ms time 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 1000 300us 1 0.001 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB411D Data Sheet 0.5 0.4 D=1/2 0.3 Sin(θ＝180) 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1.5 DC 0.2 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 1 Io t T VR D=t/T VR=10V Tj=125℃ REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.15 DC D=1/2 0.1 DC 0.05 Sin(θ＝180) D=1/2 0.5 Sin(θ＝180) 0 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 1 DC D=1/2 0.5 Sin(θ＝180) 0 0 25 50 Io t T VR D=t/T VR=10V Tj=125℃ 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A