RB411VA-50

Data Sheet Schottky Barrier Diode RB411VA-50  Applications General rectification  Dimensions (Unit : mm) 0.17±0.1 　　 0.05 1.3±0.05  Land size figure (Unit : mm) 1.1 1.9±0.1 2.5±0.2 TUMD2  Construction Silicon epitaxial planar 0.8±0.05  Structure ROHM : TUMD2 　　　 0.1 dot (year week factory) + day 0.6±0.2  Taping specifications (Unit : mm) 4 .0±0.1 2.0±0.05 1.75±0.1 φ1.55±0.1 　　　　　 0 0.25±0.05 3.5±0.05 8.0±0.2 1.43±0.05 4.0±0.1 φ1.0±0.2 　　　　　0 2.75 2.8±0.05 0.9±0.08  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 50 20 0.5 3 125 40 to 125 Unit V V A A °C °C  Electrical characteristics (Ta=25°C) Parameter Forawrd voltage Reverse current Capacitance between terminals Symbol VF 1 VF 2 IR Ct Min. - Typ. 20 Max. 0.50 0.30 30 - Unit V V μA pF IF=500mA IF=10mA VR=10V Conditions VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 0.8 0.5  Features 1) Small mold type. (TUMD2) 2) High reliability. 2.0 2011.04 RB411VA-50 Data Sheet 1000 Ta=25℃ Ta=75℃ 10000 1000 100 Ta=125℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 100 Ta=125℃ 10 Ta=-25℃ Ta=25℃ 10 1 0.1 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 10 1 0.1 0 100 200 300 400 500 1 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 50 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 460 240 100 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 450 440 430 420 410 AVE:405.6mV σ:3.0258mV FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=500mA n=30pcs 230 220 210 200 AVE:213.2mV 190 Ta=25℃ IF=10mA n=30pcs 90 80 70 60 50 40 30 20 10 0 AVE:5.76uA Ta=25℃ VR=10V n=30pcs AVE:432.1mV VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 25 20 30 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 24 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 23 22 21 20 19 18 17 16 15 Ct DISPERSION MAP AVE:19.41pF Ta=25℃ f=1MHz VR=0V n=10pcs Ifsm 15 1cyc 8.3ms 25 20 15 10 5 AVE:6.20ns 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 5 AVE:6.30A 0 IFSM DISRESION MAP trr DISPERSION MAP 10 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 8.3ms 8.3ms 1cyc 15 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board t 5 5 10 IM=1mA IF=100mA 1ms time 300us 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 1000 1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 RB411VA-50 Data Sheet 0.5 0.4 D=1/2 0.3 Sin(θ＝180) 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1.5 DC 0.5 0.4 1.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 1 Io t T VR D=t/T VR=25V Tj=125℃ REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.3 0.2 0.1 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 50 D=1/2 DC Sin(θ＝180) DC D=1/2 0.5 Sin(θ＝180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 1 DC D=1/2 0.5 Sin(θ＝180) 0 0 25 50 Io t T VR D=t/T VR=25V Tj=125℃ 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A