RB425D_11

Data Sheet Schottky Barrier Diode RB425D  Applications Low power rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 1.9 2.8±0.2 1.6－0.1  Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.4 　－0.05 ＋0.1 (3) ＋0.2 1.0MIN. 0.15 －0.06 ＋0.1 0.95 0.8MIN. 0～0.1 0.3～0.6 SMD3 (2) (1) 0.95 1.9±0.2 0.8±0.1 1.1±0.2 0.01  Construction Silicon epitaxial planer 0.95  Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 3.2±0.1 3.2±0.1 4.0±0.1 φ1.05MIN 0～0.5 5.5±0.2 3.2±0.1 1.35±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode：Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 100 1 125 40 to 125 Unit V V mA A °C °C  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF 1 VF 2 IR1 Ct1 Min. - Typ. 6 Max. 0.55 0.34 30 - Unit V V μA pF Conditions IF=100mA IF=10mA VR=10V VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 2.4 2.9±0.2 各リードとも Each lead has same dimension 同寸法 RB425D Data Sheet 100 Ta=125℃ 10000 Ta=125℃ Ta=75℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ 1 Ta=25℃ Ta=-25℃ 0.1 100 10 1 Ta=-25℃ 0.1 0.01 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 35 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 10 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 470 310 D1 30 D2 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 460 450 440 430 AVE:439.5mV 420 300 290 280 270 AVE:281.5mV 260 REVERSE CURRENT:IR(uA) Ta=25℃ IF=100mA n=30pcs Ta=25℃ IF=10mA n=30pcs 25 20 15 10 5 0 AVE:2.548uA Ta=25℃ VR=10V n=10pcs VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 10 20 30 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 8 7 6 5 4 3 2 1 0 Ct DISPERSION MAP AVE:6.09pF Ta=25℃ f=1MHz VR=10V n=10pcs Ifsm 15 1cyc 8.3ms 25 20 15 10 5 AVE:6.20ns 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 5 AVE:5.50A 0 IFSM DISPERSION MAP trr DISPERSION MAP 15 15 1000 Ifsm Ifsm 10 8.3ms 8.3ms 1cyc t 10 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 Rth(j-c) Mounted on epoxy board 10 IM=1mA IF=10mA 5 5 1ms time 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 300us 1 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB425D Data Sheet 0.1 Per chip 0.08 0.07 0.06 Per chip 0.3 Per chip REVERSE POWER DISSIPATION:PR (W) DC D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 0.2 0.15 D=1/2 0.1 0.05 0 Sin(θ＝180) 0A 0V DC Io t T VR D=t/T VR=15V Tj=125℃ FORWARD POWER DISSIPATION:Pf(W) 0.05 0.04 0.03 0.02 0.01 DC Sin(θ＝180) D=1/2 0.06 0.04 0.02 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 Sin(θ＝180) 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0.3 Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 0.2 0.15 0.1 0.05 0 0 25 50 DC 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ D=1/2 Sin(θ＝180) 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A