RB441Q-40

RB441Q-40 Diodes Schottky barrier diode RB441Q-40 Applications Low current rectification External dimensions (Unit : mm) CATHODE BAND (BLACK ) TYPE NO. (BLACK ) Features 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability φ0 .4 ± 0 .1 S 3 - 2 9 ±1 2.7±0 .3 29± 1 φ1.8 ± 0 .2 ROHM : MSD JEDEC : DO- 3 4 Construction Silicon epitaxial planar Taping specifications Sym bo l Stan dard dim e n sio n valu e ( m m ) T -72 Ａ B T- 7 7 2 6 .0 52.4±1.5 +0.4 0 H2 BLUE A BROWN E B C L1 F H1 L2 D T -72 5.0±0.5 T -77 5.0±0.3 T -72 C 1.0 m ax . T -77 T -72 D 0 T -77 T -72 1/2A±1.2 E T -77 1/2A±0.4 T -72 0.7 m ax . Ｆ T -77 0.2 m ax . T -72 H1 6.0±0.5 T -77 T -72 H2 5.0±0.5 T -77 T -72 1.5 m ax . | L1-L2| T -77 0.4 m ax . ＊H1( 6m m ) ：B RO W N Absolute maximum ratings (Ta = 25°C) Param eter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction tem perature Storage tem perature Electrical characteristics (Ta = 25°C) Param eter Sym bol Sym bol VRM VR Io IFSM Tj Tstg Lim its 40 40 100 1 125 -40 to +125 Unit V V mA A ℃ ℃ Forward current Reverse current Capacitance between term inals VF1 VF2 IR Ct Min. - Typ. 6.0 Max. 0.34 0.55 100 - Unit V V µA pF Conditions IF=10m A IF=100m A VR=40V VR=10V , f=1MHz Rev.C 1/3 RB441Q-40 Diodes Electrical characteristic curves 100 Ta=125℃ 10000 Ta=125℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 1000 100 10 1 Ta=-25℃ Ta=75℃ Ta=75℃ 10 Ta=-25℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ 10 1 0.1 0.01 0.1 0 100 200 300 400 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 500 1 0 10 20 30 40 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 460 FORWARD VOLTAGE:VF(mV) 320 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=100mA n=30pcs 100 Ta=25℃ IF=10mA n=30pcs 90 REVERSE CURRENT:IR(uA) 450 440 430 420 AVE:438.1mV 310 300 290 280 270 80 70 60 50 40 30 20 10 0 AVE:4.837uA Ta=25℃ VR=40V n=30pcs AVE:287.7mV 410 VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 10 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 Ifsm 8 7 6 5 4 3 2 1 0 Ct DISPERSION MAP Ta=25℃ f=1MHz VR=10V n=10pcs 15 8.3 ms 8.3ms 1cyc 10 AVE:10.3A 5 AVE:6.09pF 10 Ifsm 1cyc 8.3ms 5 0 IFSM DISRESION MAP Mounted on epoxy board 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 20 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) IM=10mA IF=100mA 0.1 Rth(j-a) 0.08 FORWARD POWER DISSIPATION:Pf(W) Rth(j-l) D=1/2 DC 1ms time 15 300us 0.06 0.04 0.02 Sin(θ＝180) 10 100 Rth(j-c) 5 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 10 0.001 0 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 Rev.C 2/3 RB441Q-40 Diodes 0.1 0.3 0.25 0.2 0.15 D=1/2 0.1 0.05 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve(Io-Ta) Sin(θ＝180) 0A 0V Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 VR D=t/T VR=20V T Tj=125℃ 0.25 0.2 0.15 0.1 0.05 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 12 5 Sin(θ＝180) 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.08 REVERSE POWER DISSIPATION:PR (W) t 0.06 Sin(θ＝180) D=1/2 DC DC DC D=1/2 0.04 0.02 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1