RB450F_1

RB450F Diodes Schottky barrier diode RB450F Applications Low current rectificaton External dimensions (Unit : mm) Land size figure (Unit : mm) 1.3 2.0± 0.2 0.3± 0.1 1.25±0 .1 2.1±0.1 Features 1) Small mold type. (UMD3) 2) Low IR 3) High reliability. (2) （ 0 .65） (3) 0.9MIN. 0.65 0.8MIN. 0～ 0.1 0.1Min (1) （0 .6 5 ） 0.7± 0.1 0.9± 0. 1 UMD3 1. 3± 0.1 Structure Construction Silicon epitaxial planar ROHM : UMD3 JEDEC : S OT- 3 2 3 JEITA : S C- 7 0 do t (ye ar we e k fac to ry) Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 ±0.1 1.75±0.1 3.5±0.05 8.0 ±0.2 2.4±0.1 5.5±0.2 2.25 ±0.1 　　　　 0 4.0±0.1 φ0.5±0.05 0～0 .1 2.4±0.1 1.25±0.1 Absolute maximum ratings (Ta=25°C) Param eter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction tem perature Storage tem perature Sym bol VRM VR Io IFSM Tj Tstg Lim its 45 40 100 1 125 -40 to +125 Unit V V mA A ℃ ℃ Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminal Symbol VF IR Ct Min. Typ. 6.0 Max. 0.45 1 Unit V µA pF Conditions IF=10mA VR=10V VR=10V , f=1MHz 1.6 各リー ドとも Each lead has same dimension 同寸 法 0.15± 0 .05 Rev.B 1/3 RB450F Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=125℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(nA) 100 10 1 Ta=125℃ 100 f=1MHz 10 Ta=75℃ Ta=25℃ Ta=-25℃ Ta=75℃ 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 0.1 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 FORWARD VOLTAGE:VF(mV) 1000 REVERSE CURRENT:IR(nA) 20 Ta=25℃ VR=10V n=30pcs 18 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 390 380 370 360 AVE:370.2mV 350 Ta=25℃ IF=10mA n=30pcs 900 800 700 600 500 400 300 200 100 0 AVE:88.62nA 16 14 12 10 8 6 4 2 0 AVE:5.81pF Ta=25℃ f=1MHz VR=10V n=10pcs VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 15 Ifsm Ifsm t 10 Ifsm 15 1cyc 8.3ms 10 8.3ms 8.3ms 1cyc 10 5 5 5 AVE:5.5A 0 0 0.1 IFSM DISRESION MAP 1 10 10 0 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 0.1 Rth(j-a) REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.003 Rth(j-c) 100 Mounted on epoxy board IF=100mA 0.08 D=1/2 0.06 Sin(θ＝180) 0.04 0.02 0 DC 0.002 DC 0.001 Sin(θ＝180) D=1/2 10 1ms time 300us 1 0.001 0 0 0 .1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 .2 0 10 20 30 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.B 2/3 RB450F Diodes 0.3 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T 0.2 0.15 0.1 0.05 0 0 DC D=1/2 VR D=t/T VR=15V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 0A 0V Io 0.25 0.2 0.15 0.1 0.05 0 Sin(θ＝ ) 0 25 DC D=1/2 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 25 50 75 100 1 25 50 75 1 00 1 25 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1