RB451F_11

Data Sheet Schottky Barrier Diode RB451F  Applications Low current rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 1.3 2.0±0.2 0.3± 0.1 各リ ード とも Each lead has same dimensions 同寸 法 (3) 0.65 0.9MIN.  Features 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. 1.25±0.1 2.1±0.1 0.8MIN 0～0.1 0.1Min (2) （0.65） （ 0.65） (1) UMD3 1.3±0.1 0.7± 0.1 0.9± 0.1  Construction Silicon epitaxial planer ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory)  Structure  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 2.4±0.1 5.5±0.2 2.25±0.1 　　　　 0 4.0±0.1 φ0.5±0.05 0～0.1 2.4±0.1 1.25±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 100 1 125 40 to 125 Unit V V mA A °C °C  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF 1 VF 2 IR Ct Min. - Typ. 6.0 Max. 0.55 0.34 30 - Unit V V μA pF Conditions IF=100mA IF=10mA VR=10V VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 1.6 0.15± 0.05 RB451F Data Sheet 100 10000 Ta=125℃ Ta=125℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 Ta=25℃ 1 Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 10 0.1 0.01 0 100 200 300 400 500 600 1 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 35 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 470 310 30 REVERSE CURRENT:IR(uA) Ta=25℃ IF=10mA n=30pcs FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 460 450 440 430 AVE:439.5mV 420 Ta=25℃ IF=100mA n=30pcs 300 290 280 270 AVE:281.5mV 260 25 20 15 10 5 0 AVE:0.928uA Ta=25℃ VR=10V n=10pcs VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 20 20 30 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 18 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 16 14 12 10 8 6 4 2 0 Ta=25℃ f=1MHz VR=10V n=10pcs Ifsm 15 1cyc 8.3ms 25 20 15 10 5 AVE:6.20nS 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 5 AVE:5.50A 0 AVE:5.81pF Ct DISPERSION MAP IFSM DISRESION MAP trr DISPERSION MAP 15 15 Ifsm 1000 Ifsm t 10 8.3ms 8.3ms 1cyc 10 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 Rth(j-c) Mounted on epoxy board 5 5 10 IM=10mA time IF=100mA 1ms 300us 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB451F Data Sheet 0.1 0.08 0.07 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.06 0.25 0.2 0.15 D=1/2 0.1 0.05 0 Sin(θ＝180) DC REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) DC D=1/2 Sin(θ＝180) 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ 0.05 0.04 Sin(θ＝180) 0.03 0.02 0.01 0 DC D=1/2 0.06 0.04 0.02 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 10 20 30 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 0.2 0.15 0.1 0.05 0 0 25 DC D=1/2 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ Sin(θ＝180) 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A