RB461F_11

Data Sheet Schottky Barrier Diode RB461F  Applications Low power rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 1.3 2.0±0.2 0.3±0.1 各リードとも Each lead has same dimension 0.15±0.05 同寸法 (3) 1.25±0.1 3)High reliability (2) (1) （0.65） 2.1±0.1  Features 1)Small mold type. (UMD3) 2)Low VF. 0.9MIN. 0.65 0.8MIN 0～0.1 0.1Min UMD3  Construction Silicon epitaxial planer （0.65） 1.3±0.1 0.7±0.1 0.9±0.1  Structure ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot (year week factory)  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 2.4±0.1 5.5±0.2 2.25±0.1 　　　　 0 4.0±0.1 φ0.5±0.05 0～0.1 2.4±0.1 1.25±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 25 20 0.7 3 125 40 to 125 Unit V V A A °C °C  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.49 200 Unit V μA Conditions IF=700mA VR=20V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C 1.6 RB461F Data Sheet 1 Ta=125℃ 100000 Ta=125℃ 100 f=1MHz REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=75℃ 0.1 Ta=-25℃ Ta=25℃ 0.01 1000 100 10 1 0.1 Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 10000 Ta=25℃ 10 Ta=-25℃ 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0 10 20 1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 480 100 100 Ta=25℃ VR=20V n=30pcs 95 90 85 80 75 70 65 60 55 50 AVE:79.4pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) 80 70 60 50 40 30 20 10 0 AVE:12.63uA 460 450 440 AVE:445.4mV 430 VF DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 470 REVERSE CURRENT:IR(uA) Ta=25℃ VF=0.7A n=30pcs 90 IR DISPERSION MAP Ct DISPERSION MAP 20 30 10 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 AVE:10.4ns 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 5 10 5 AVE:5.20A 0 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISPERSION MAP trr DISPERSION MAP 10 1000 1 Rth(j-a) 0.8 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) Mounted on epoxy board IM=10mA IF=100mA 0.6 0.4 0.2 0 D=1/2 Sin(θ＝180) DC 5 10 1ms time 300us 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.5 1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 1.5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.C RB461F Data Sheet 0.001 0.0008 1.5 1.5 VR D=t/T VR=10V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V 1 D=1/2 DC Io t T DC 1 D=1/2 0A 0V Io t T VR D=t/T VR=10V Tj=125℃ REVERSE POWER DISSIPATION:PR (W) 0.0006 0.0004 DC 0.0002 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Sin(θ＝180) D=1/2 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A