RB471E

RB471E Diodes Schottky barrier diode RB471E Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 M IN. 2.9± 0.2 0.3 ＋0.1 各リー ドとも 同寸法 Each lead has same dimension 2.8±0.2 1.6 ＋0.2 －0.1 Features 1) Small mold type. (SMD5) 2) High reliability. 　－0.05 0. 15 ± 0 . 1 　 　 　0 . 06 1.0 M IN. (1 ) (2) 0.4 5 0.3 5 0.3 5 0.4 5 0.6 0～ 0. 1 0.3～0 .6 0.9 5 0.9 5 Construction Silicon epitaxial planar (5 ) (4) 1.9± 0.2 ( 3) 0.8± 0.1 1.1± 0.2 0 .1 SMD5 1.9 0.95 0.95 Structure ROHM : S MD5 JEITA : S C-74A we e k c o de Taping specifications (Unit : mm) 4.0 ±0.1 2.0 ±0.0 5 φ1.5 ±0 .1 　　　　　 0 1.75 ±0 .1 0 .3±0.1 3.5±0.05 3.2±0.1 5.5±0.2 8.0±0.2 3.2±0.1 4.0 ±0.1 φ1.0MIN 0～0.5 3.2±0.1 1.35 ±0.1 Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） (*1) Junction tem perature Storage tem perature (*1) Rating of per diode Sym bol VRM VR Io IFSM Tj Tstg Lim its 40 40 0.1 1 125 -40 to +125 Unit V V A A ℃ ℃ Electrical characteristics (Ta=25°C) Param eter Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR Ct Min. Typ. Max. 0.55 0.34 30 6 Unit V V µA pF IF=100m A IF=10m A VR=10V VR=10V , f=1MHz Conditions 2.4 Rev.B 1/3 RB471E Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=125℃ 10000 100 f=1MHz Ta=125℃ Ta=75℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ 1 Ta=25℃ 100 10 1 0.1 0.01 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 35 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 10 0.1 Ta=-25℃ Ta=-25℃ 0.01 0 100 200 300 400 5 00 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 470 310 30 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 300 290 280 270 AVE:281.5mV 260 REVERSE CURRENT:IR(uA) 460 450 440 430 420 Ta=25℃ IF=100mA n=30pcs Ta=25℃ IF=10mA n=30pcs 25 20 15 10 5 0 Ta=25℃ VR=10V n=10pcs AVE:2.548uA AVE:439.5mV VF DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 10 20 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 8 7 6 5 4 3 2 1 0 Ta=25℃ f=1MHz VR=10V n=10pcs RESERVE RECOVERY TIME:trr(ns) Ifsm 15 1cyc 8.3ms 25 20 15 10 5 AVE:6.20ns 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 AVE:5.10pF 5 AVE:5.50A 0 Ct DISPERSION MAP IFSM DISRESION MAP trr DISPERSION MAP 15 15 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 8.3ms 8.3ms 1cyc Ifsm 10 1cyc 8.3ms Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 5 5 10 IM=1mA IF=10mA 1ms time 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1 00 0 0.1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 1 100 1 0.001 300us 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 10 00 Rev.B 2/3 RB471E Diodes 0.1 Per chip 0.08 0.06 D=1/2 0.07 0.3 Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 0.2 0.15 0.1 0.05 0 0 Per chip 0A 0V t Io VR D=t/T VR=15V Tj=125℃ REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) 0.05 0.04 0.03 0.02 0.01 0 DC Sin(θ＝180) D=1/2 DC 0.06 Sin(θ＝180) 0.04 T DC 0.02 D=1/2 Sin(θ＝180) 0 0 0 .1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0 .2 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0.3 Per chip 0.25 0.2 0.15 DC 0A 0V t T Io VR D=t/T VR=15V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) D=1/2 0.1 0.05 0 0 25 50 75 10 0 12 5 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Sin(θ＝180) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1