RB471E_11

Schottky Barrier Diode RB471E  Applications Low current rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 0.8MIN. 2.9±0.2 Each lead has ＋0.1 各リードとも同寸法 same dimension 0.3 　－0.05 0.15±0.1 　 　　0.06 1.0MIN. 2.8±0.2 1.6  Features 1) Small mold type. (SMD5) 2) High reliability. (1) (2) 0.45 0.35 0.35 0.45 0.6 ＋0.2 －0.1 0～0.1 0.3～0.6 0.95 0.95 SMD5 1.9 (5) (4) 1.9±0.2 (3) 0.8±0.1 1.1±0.2 0.1 0.95 0.95  Construction Silicon epitaxial planar  Structure ROHM : SMD5 JEITA : SC-74A week code  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 3.2±0.1 5.5±0.2 8.0±0.2 3.2±0.1 4.0±0.1 φ1.0MIN 0～0.5 3.2±0.1 1.35±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 0.1 1 125 40 to 125 Unit V V A A °C °C Symbol VF 1 VF 2 IR Ct Min. - Typ. - Max. 0.55 0.34 30 6 Unit V V μA pF Conditions IF=100mA IF=10mA VR=10V VR=10V , f=1MHz www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 2.4 RB471E Data Sheet 100 Ta=125℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10000 Ta=125℃ Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 35 Ta=25℃ 1000 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=75℃ 1 Ta=25℃ 10 0.1 Ta=-25℃ 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 470 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 460 450 440 430 420 Ta=25℃ IF=100mA n=30pcs 310 300 290 280 270 AVE:281.5mV 260 REVERSE CURRENT:IR(uA) Ta=25℃ IF=10mA n=30pcs 30 25 20 15 10 AVE:2.548uA 5 0 VF DISPERSION MAP IR DISPERSION MAP Ta=25℃ VR=10V n=10pcs AVE:439.5mV VF DISPERSION MAP 10 20 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 Ifsm 1cyc 8.3ms 25 20 15 10 5 AVE:6.20ns 0 IFSM DISRESION MAP trr DISPERSION MAP Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 8 7 6 5 4 3 2 1 0 Ta=25℃ f=1MHz VR=10V n=10pcs 15 10 AVE:5.10pF 5 AVE:5.50A 0 Ct DISPERSION MAP 15 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 10 8.3ms 8.3ms 1cyc 15 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Ifsm 10 1cyc 8.3ms 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 5 5 10 IM=1mA IF=10mA 1ms time 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 0.1 1 10 100 TIME:t(s) IFSM-t CHARACTERISTICS 1 0.001 300us 10 TIME:t(ms) Rth-t CHARACTERISTICS 0.1 1000 www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB471E Data Sheet 0.1 Per chip 0.08 FORWARD POWER DISSIPATION:Pf(W) 0.06 0.04 0.02 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) D=1/2 0.07 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.06 0.05 0.04 0.03 0.02 0.01 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC Sin(θ＝180) D=1/2 0.3 Per chip Per chip 0.25 0.2 0.15 0.1 0.05 0 0 D=1/2 DC 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ DC Sin(θ＝180) 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0.3 Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 0.2 0.15 DC 0A 0V Io t T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 0.05 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Sin(θ＝180) www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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