RB480

RB480K Diodes Shottky barrier diode RB480K !Applications Low current rectification !External dimensions (Units : mm) 2.0±0.2 0.9±0.1 0.7 0.2±0.1 0.25±0.1 0∼0.1 1pin MARK 2.0±0.2 1.3±0.1 0.65 0.65 0.25±0.1 0.9±0.1 0.7 0.1Min. 0.2±0.1 0.65 0.65 1.3±0.1 0.2±0.1 0.15±0.05 0.25±0.1 0.65 0.65 1.3±0.1 0.25±0.1 0.15±0.05 !Construction Silicon epitaxial planar ROHM: UMD4 EIAJ: SC-82 JEDEC: SOT-343 ∗There are two different markings. !Circuit !Absolute maximum ratings (Ta=25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current∗ Junction temperature Storage temperature ∗60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 45 40 0.1 1 125 −40∼+125 Unit V V A A ˚C ˚C 0.1Min. 3T 3T !Features 1) Small surface mounting (UMD4) 2) Low IR. (IR=0.3µA Typ.) 3) This is a composite component and is ideal for reducing the number of components used. 4) High reliability. 1.25±0.1 0.6 0.65 0.3±0.1 1.25±0.1 1.25±0.1 2.1±0.1 2.1±0.1 0∼0.1 RB480K Diodes !Electrical characteristics (Ta=25°C) Parameter Forward voltage Symbol VF1 VF2 IR1 Reverse current IR2 Ct1 Capacitance between terminals Ct2 Min. − − − − − − Typ. − − − − 6.0 − Max. 0.45 0.60 1 5 − 25 Unit V V µA µA pF pF IF=10mA IF=100mA VR=10V VR=40V VR=10V, f=1MHz VR=0V Conditions !Electrical characteristic curves (Ta=25°C) 1 1m CAPACITANCE BETWEEN TERMINALS : CT (pF) 100 50 FORWARD CURRENT : IF (A) 100m 25 ˚C ˚C REVERSE CURRENT : IR (A) 100µ Ta=125˚C 75 25 ˚C 5˚ C Ta =1 10m 10µ 75˚C 1µ 25˚C 100n 20 10 5 1m 100µ 10µ −2 2 0 0 2 4 6 8 10 12 14 REVERSE VOLTAGE : VR (V) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10n 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.1 Foward temperature chraracteristics Fig.2 Reverse temperature chraracteristics Fig.3 Capacitance between terminals chraracteristics Ta=25˚C 20 I surge (A) I surge 10 PULSE WIDTH 0 100µ 1m 10m 100m 1 PULSE WIDTH (sec) Fig.4 Surge current chraracteristics