RB480Y-40

Data Sheet Schottky Barrier Diode RB480Y-40 lApplications Low current rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 0.5 1.6±0.1 1.6±0.1 0.22±0.05 0 .13±0.05 (3) 0.45 1.2±0.1 3)High reliability 1.6±0.1 1.6±0.05 lFeatures 1)Ultra small mold type. (EMD4) 2)Low IR (4) 1.0 0～0.1 EMD4 lConstruction Silicon epitaxial planer (1) 0.5 1.0±0.1 0.5 (2) 0.5±0.05 lStructure ROHM : EMD4 JEITA : SC-75A Size week code 1Pin Mark lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.5±0.1 　　　　　 0 0.3±0.1 3.5±0.05 1.75±0.1 1.65±0.1 5.5±0.2 8.0±0.2 1.55 φ 0.8±0.1 1 .65±0.1 1.7±0.05 1PIN 4.0±0.1 0～0.1 0.65±0.1 lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Tj Storage temperature Tstg (*1) Rating of per diode lElectrical characteristics (Ta=25C) Parameter Symbol VF1 Forward voltage VF2 Reverse current IR1 IR2 Limits 40 40 200 1 125 -40 to +125 Unit V V mA A C C Min. - Typ. - Max. 0.39 0.55 1.0 10.0 Unit V V μA μA IF=10mA IF=100mA VR=10V VR=40V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.10 - Rev.A 1.65±0.01 RB480Y-40 　 Data Sheet 1000 1000 Ta=125°C 100 FORWARD CURRENT:IF(mA) Ta=125°C Ta=75°C REVERSE CURRENT:IR(μA) 100 Ta=75°C 10 10 1 Ta=25°C 0.1 1 Ta=25°C 0.1 Ta=-25°C 0.01 0.01 Ta=-25°C 0.001 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.0001 0 10 20 30 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz 510 Ta=25°C IF=100mA n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) FORWARD VOLTAGE:VF(mV) 500 490 10 AVE:491.2mV 480 470 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 460 VF DISPERSION MAP 1000 900 REVERSE CURRENT:IR(nA) 800 700 600 500 400 300 AVE:67.0nA 200 100 0 IR DISPERSION MAP Ta=25°C VR=10V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 30 29 28 27 26 25 24 23 AVE:23.87pF 22 21 20 Ct DISPERSION MAP Ta=25°C f=1MHz VR=0V n=10pcs www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RB480Y-40 　 Data Sheet 20 1cyc REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 8.3ms 20 Ta=25°C IF=0.1A IR=0.1A Irr=0.1*IR n=10pcs 15 10 10 5 5 AVE:6.2ns AVE:3.70A 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 10 9 PEAK SURGE FORWARD CURRENT:IFSM(A) 8 7 6 5 4 3 2 1 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 8.3ms 1cyc. IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 10 9 IFSM 8 7 6 5 4 3 2 1 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 time 1000 Rth(j-a) TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 0.25 D.C. 0.2 FORWARD POWER DISSIPATION:Pf(W) D=1/2 Sin(θ＝180) 0.15 100 Rth(j-c) 0.1 0.05 10 0.0001 0.001 0 0.01 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RB480Y-40 　 Data Sheet 0.01 0.5 0A AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io t D.C. 0.3 D=1/2 0.2 Sin(θ＝180) 0.1 T VR D=t/T VR=20V Tj=125°C 0.008 REVERSE POWER DISSIPATION:PR (W) D.C. 0.4 0V 0.006 D=1/2 0.004 Sin(θ＝180) 0.002 0 0 10 20 30 40 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0.5 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 D.C. 0.3 D=1/2 0.2 Sin(θ＝180) 0.1 t T Io VR ELECTROSTATIC DISCHARGE TEST ESD(KV) D=t/T VR=20V Tj=125°C 30 25 20 15 10 AVE:5.60kV AVE:5.1kV 5 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A