RB481Y-90_11

Data Sheet Schottky Barrier Diode RB481Y-90  Applications Low current rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 0.5 0.22±0.05 0.13±0.05 (3) 0.45 1.6±0.05 1.6±0.1 1.6±0.1 1.6±0.05 1.2±0.1  Features 1) Ultra small mold type. (EMD4) 2) Low VF 3) High reliability (4) 1.0 0～0.1 EMD4  Construction Silicon epitaxial planar (1) 0.5 1.0±0.1 0.5 (2)  Structure 0.5±0.05 ROHM : EMD4 JEITA : SC-75A Size dot (year week factory)  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 1.75±0.1 0.3±0.1 3.5±0.05 1.65±0.1 5.5±0.2 8.0±0.2 1.65±0.1 1.7±0.05 1PIN 4.0±0.1 φ0.8±0.1 0～0.1 0.65±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1) Rating of per diode Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 100 1 125 40 to 125 Unit V V mA A °C °C  Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. 0.55 20 Max. 0.61 100 Unit V μA IF=100mA VR=90V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.05 - Rev.C 1.65±0.01 1.55 RB481Y-90 Data Sheet 100 10000 Ta=75℃ 1000 Ta=125℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125℃ 10 Ta=25℃ Ta=-25℃ 1 Ta=75℃ 100 Ta=25℃ 10 1 0.1 0.01 Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 80 90 10 0.1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 40 50 60 70 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 580 500 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ VR=90V n=30pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 570 560 550 540 AVE:552.0mV 530 VF DISPERSION MAP Ta=25℃ IF=0.1A n=30pcs 450 400 350 300 250 200 150 100 50 0 AVE:29.31uA 29 28 27 26 25 24 23 22 21 20 AVE:21.69pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 20 30 10 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 1cyc 8.3ms 25 20 15 10 AVE:11.7ns 5 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 9 8 7 6 5 4 3 2 1 0 1 Ifsm 8.3ms 8.3ms 1cyc 10 5 AVE:3.70A 0 IFSM DISRESION MAP trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1000 0.2 Rth(j-a) Per diode PEAK SURGE FORWARD CURRENT:IFSM(A) 9 8 7 6 5 4 3 2 1 0 1 10 TIME:t(s) IFSM-t CHARACTERISTICS 100 Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) FORWARD POWER DISSIPATION:Pf(W) Rth(j-c) 100 D=1/2 0.1 Sin(θ＝180) DC Mounted on epoxy board IM=10mA IF=100mA 1ms time 300us 10 0.001 0 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.05 0.1 0.15 0.2 0.25 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.3 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.C RB481Y-90 Data Sheet 1 Per diode 0.8 0.3 Per diode 0A 0V Io t T VR D=t/T VR=45V Tj=125℃ 0.3 Per diode AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V DC Io t VR D=t/T VR=45V T Tj=125℃ REVERSE POWER DISSIPATION:PR (W) 0.2 D=1/2 0.6 0.4 D=1/2 0.2 0 0 20 40 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 80 DC Sin(θ＝180) DC 0.2 D=1/2 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A