RB491D

Data Sheet Shottky barrier diode RB491D Application Low current rectification Dimensions (Unit : mm) Lead size figure (Unit : mm) 0.8MIN. 0.4 ＋0.1 2.9±0.2 各リードとも 同寸法 Each lead has same dimension 0.15－0.06 (3) ＋0.1 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 　－0.05 1.0MIN. 0.95 2.8±0.2 1.6－0.1 ＋0.2 0～0.1 0.3～0.6 1.9 SMD3 (2) (1) 0.95 1.9±0.2 0.8±0.1 0.2 1.1±0.2 1.1 0.1 0.01 Structure Silicon epitaxial planar 0.95 Structure ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.5±0.1 　　　　　 0 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 3.2±0.1 3.2±0.1 4.0±0.1 φ1.05MIN 0～0.5 5.5±0.2 3.2±0.1 1.35±0.1 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage (*1) Forward current surge peak (60Hz 1cyc) (*1) ・ Junction temperature Storage temperature (*1) Rating of per diode Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.45 200 Unit V μA IF=1A VR=20V Conditions Symbol VRM VR Io IFSM Tj Tstg Limits 25 20 1 3 125 40 to 125 Unit V V A A °C °C www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.03 - Rev.D 2.4 RB491D Data Sheet 1 100000 Ta=75℃ 1000 Ta=125℃ REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz FORWARD CURRENT:IF(A) 10000 1000 100 10 Ta=-25℃ 1 0.1 Ta=75℃ Ta=25℃ Ta=125℃ 0.1 Ta=25℃ Ta=-25℃ 100 0.01 10 0.001 0 100 200 300 400 500 600 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 5 10 15 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 20 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 420 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) Ta=25℃ IF=1A n=30pcs 500 450 400 350 300 250 200 150 100 50 0 VF DISPERSION MAP IR DISPERSION MAP AVE:37.93uA Ta=25℃ VR=20V n=30pcs 200 190 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 180 170 160 150 140 130 120 110 100 AVE:159.8pF Ta=25℃ f=1MHz VR=0V n=10pcs 410 400 390 AVE:399.2m 380 Ct DISPERSION MAP 30 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 20 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) 20 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 20 Ifsm 15 8.3ms 8.3ms 1cyc 10 15 10 10 5 AVE:9.3ns 0 trr DISPERSION MAP 5 AVE:11.1A 0 IFSM DISRESION MAP 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 20 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 15 t 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) Rth(j-a) 100 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 1 Per chip D=1/2 0.5 Sin(θ＝180) DC 10 Mounted on epoxy board 10 IM=1mA IF=10mA 5 1ms time 300us 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0 10 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2 TIME:t(s) Rth-t CHARACTERISTICS 0.1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.03 - Rev.D RB491D Data Sheet 0.3 Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 REVERSE POWER DISSIPATION:PR (W) 0.2 0.15 D=1/2 0.1 0.05 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC Sin(θ＝180) 3 3 Per chip AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V D=1/2 DC Io t T VR D=t/T VR=10V Tj=125℃ 2.5 2 1.5 Per chip 2.5 0A 0V Io t VR D=t/T VR=10V T Tj=125℃ 2 DC D=1/2 1.5 1 1 0.5 0 0.5 Sin(θ＝180) 0 0 25 50 75 100 125 Sin(θ＝180) 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A