RB495D

RB495D Diodes Shottky barrier diode RB495D Application General rectification. External dimensions (Unit : mm) Lead size figure (Unit : mm) 1.9 2.9± 0.2 各リ ードと も Each lead has same dimension 同寸法 0. 15 －0.06 2. 8±0.2 1.6－0.1 Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability. 0.4 ＋0.1 　－0.05 ＋0.2 1.0M IN . (3) 0.95 0～ 0.1 0 .3～0.6 0.8M IN . (2) (1) 0.95 1 .9± 0. 2 0. 8± 0 .1 1. 1± 0. 2 0.01 S MD3 Structure Silicon epitaxial planar 0.95 Structure ROHM : S MD3 JEDEC :S 0 T-3 46 JEITA : S C-59 we e k c o de Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1 .5 ±0 .1 　　　　　 0 1.75±0.1 0.3±0.1 3 .5±0.05 8.0±0.2 3 .2±0.1 3 .2±0.1 4.0±0.1 φ1.05 MIN 0～0.5 5.5±0.2 3.2±0.1 1.35±0.1 Absolute maximum ratings (Ta=25°C) Param eter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) Junction tem perature Storage tem perature Sym bol VRM VR Io IFSM Tj Tstg Lim its 40 25 0.4 2 125 -40 to +125 Unit V V A A ℃ ℃ (*1)Rating of per diode：Io/2 Electrical characteristics (Ta=25°C) Param eter Sym bol VF1 Forward voltage VF2 Min. - Typ. - Max. 0.30 0.50 70 Unit V V µA Conditions IF=10m A IF=200m A VR=25V Reverse current IR1 Rev.B 2.4 ＋0.1 1/3 RB495D Diodes Electrical characteristic curves (Ta=25°C) 1 Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 100000 Ta=125℃ 10000 1000 100 10 1 0.1 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz Ta=125℃ 0.1 Ta=25℃ Ta=-25℃ 0.01 Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=-25℃ 0.001 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 380 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 200 Ta=25℃ IF=200mA n=30pcs 180 160 140 120 100 80 60 40 20 0 AVE:33.62uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 370 360 350 340 AVE:359.0mV 330 Ta=25℃ VR=25V n=30pcs 100 95 90 85 80 75 70 65 60 55 50 AVE:71.8pF Ta=25℃ f=1MHz VR=0V n=10pcs VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 30 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 30 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms 20 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 25 20 15 10 5 25 20 15 10 5 AVE:8.6ns 0 15 8.3ms 8.3ms 1cyc 10 5 AVE:12.50A 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 20 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1000 Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 0.3 Per chip 15 t 100 Rth(j-c) 0.2 D=1/2 10 Mounted on epoxy board Sin(θ＝180) DC 10 IM=1mA time IF=10mA 0.1 5 1ms 300us 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.5 Rev.B 2/3 RB495D Diodes 1 Per chip 0.5 Per chip 0.4 DC 0.3 D=1/2 0.2 0.1 0 0 10 20 30 40 0 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ 0.5 Per chip 0.4 DC 0.3 D=1/2 0.2 0.1 0 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 T 0A 0V Io t VR D=t/T VR=20V Tj=125℃ AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.6 D=1/2 0.4 0.2 0 DC Sin(θ＝180) Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.8 REVERSE POWER DISSIPATION:PR (W) Sin(θ＝180) Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1