RB501V-40
Diodes
Shottky barrier diode
RB501V-40
Application Low current rectification Features 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. External dimensions (Unit : mm)
1.25±0.1 0.1±0.1 0.05
Lead size figure (Unit : mm)
0.8MIN. 0.9MIN.
1.7±0.1
2.5±0.2
UMD2
Condtruction Silicon epitaxial planer
Structure
0.3±0.05 0.7±0.2 0 .1
ROHM : UMD2 JEDEC : S 0 D- 3 2 3 JEI TA : S C-90 /A do t (ye ar we e k fac to ry)
Taping dimensions (Unit : mm)
4.0 ±0.1 2.0 ±0.05 φ1 .55±0.05 1.7 5±0 .1 0.3±0 .1
3.5±0.05
8.0±0.2
1.40±0 .1
4.0 ±0 .1
φ1.05 1.0±0.1
Absolute maximum ratings (Ta=25°C)
Param eter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction tem perature Storage tem perature Sym bol VRM VR Io IFSM Tj Tstg Lim its 45 40 100 1 125 -40 to +125 Unit V V mA A ℃ ℃
Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR Ct Min. Typ. 6.0 Max. 0.55 0.34 30 Unit V V µA pF Conditions IF=100mA IF=10mA VR=10V VR=10V , f=1MHz
2.75
2.8±0.1
Rev.B
2.1
1/3
RB501V-40
Diodes
Electrical characteristic curves (Ta=25°C)
100 Ta=125℃ 10000 Ta=125℃ 100 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
10
Ta=75℃
Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 Ta=25℃
1
Ta=25℃ Ta=-25℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000
10
0.1
0.01 0 100 20 0 300 400 50 0 600 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 35 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
470
FORWARD VOLTAGE:VF(mV)
300 290 280 270 AVE:281.5mV 260
REVERSE CURRENT:IR(uA)
460 450
FORWARD VOLTAGE:VF(mV)
Ta=25℃ IF=100mA n=30pcs
310 Ta=25℃ IF=10mA n=30pcs
30 25 20 15 10 5 0 VF DISPERSION MAP IR DISPERSION MAP AVE:2.548uA Ta=25℃ VR=10V n=10pcs
440 430 AVE:439.5mV 420
VF DISPERSION MAP
20
20
30 Ifsm 1cyc 8.3ms
PEAK SURGE FORWARD CURRENT:IFSM(A)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
16 14 12 10 8 6 4 2 0
Ta=25℃ f=1MHz IR=10V n=10pcs
RESERVE RECOVERY TIME:trr(ns)
18
25 20 15 10 5 AVE:6.20ns 0
15
Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
10
5 AVE:5.50A 0
AVE:5.81pF
Ct DISPERSION MAP
IFSM DISRESION MAP
trr DISPERSION MAP
15 Ifsm
15 Ifsm 8.3ms 8.3ms 1cyc
1000 Rth(j-a)
PEAK SURGE FORWARD CURRENT:IFSM(A)
10
PEAK SURGE FORWARD CURRENT:IFSM(A)
t
10
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
100
Rth(j-c)
Mounted on epoxy board
5
5
10
IM=10mA
IF=100mA
1ms
time
300us
0 0 .1 1 10 100
0 0 .1 1 10 100
1 0.001
0 .1
10
1000
NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
TIME:t(ms) IFSM-t CHARACTERISTICS
TIME:t(s) Rth-t CHARACTERISTICS
Rev.B
2/3
RB501V-40
Diodes
0.1 0.07 0.3
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.08
0.06
0.25 0.2 0.15 D=1/2 0.1 0.05 0 Sin(θ=180)
0A 0V t DC
Io VR D=t/T VR=20V T Tj=125℃
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
D=1/2 0.06 Sin(θ=180) DC
0.05 0.04 0.03 0.02 0.01 0 DC D=1/2 Sin(θ=180)
0.04
0.02
0 0 0 .1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 0.3 0.25 0.2 DC 0.15 0.1 0.05 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) Sin(θ=180) D=1/2 T 0A 0V Io t VR D=t/T VR=20V Tj=125℃ 0 .2
0
10
20
30
0
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta)
125
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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