RB501V-40_11

Data Sheet Schottky Barrier Diode RB501V-40  Applications Low current rectification  Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05  Land size figure (Unit : mm) 0.9MIN.  Features 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. 0.8MIN . 1.7±0.1 2.5±0.2 UMD2  Construction Silicon epitaxial planar 0.3±0.05 0.7±0.2 　　　 0.1  Structure ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory)  Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.3±0.1 3.5±0.05 8.0±0.2 1.40±0.1 4.0±0.1 φ1.05 1.0±0.1  Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 100 1 125 40 to 125 Unit V V mA A °C °C  Electrical characteristics (Ta=25°C) Parameter Forawrd voltage Reverse current Capacitance between terminals Symbol VF 1 VF 2 IR Ct Min. - Typ. 6.0 Max. 0.55 0.34 30 - Unit V V μA pF IF=100mA IF=10mA VR=10V 2.75 Conditions VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2.8±0.1 2011.05 - Rev.B 2.1 RB501V-40 Data Sheet 100 Ta=125℃ 10000 Ta=125℃ Ta=75℃ 100 f=1MHz FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) 10 Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 0 5 10 15 20 25 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 35 Ta=25℃ 1 Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 10 0.1 0.01 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 470 FORWARD VOLTAGE:VF(mV) FORWARD VOLTAGE:VF(mV) 460 450 440 430 AVE:439.5mV 420 300 290 280 270 AVE:281.5mV 260 REVERSE CURRENT:IR(uA) Ta=25℃ IF=100mA n=30pcs 310 Ta=25℃ IF=10mA n=30pcs 30 25 20 15 10 5 0 VF DISPERSION MAP IR DISPERSION MAP AVE:2.548uA Ta=25℃ VR=10V n=10pcs VF DISPERSION MAP 20 20 30 Ifsm 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 18 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 16 14 12 10 8 6 4 2 0 Ta=25℃ f=1MHz IR=10V n=10pcs REVERSE RECOVERY TIME:trr(ns) 25 20 15 10 5 0 AVE:6.20ns 15 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 5 AVE:5.50A 0 AVE:5.81pF Ct DISPERSION MAP IFSM DISRESION MAP trr DISPERSION MAP 15 Ifsm 15 Ifsm 8.3ms 8.3ms 1cyc 1000 Rth(j-a) PEAK SURGE FORWARD CURRENT:IFSM(A) 10 PEAK SURGE FORWARD CURRENT:IFSM(A) t 10 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 Rth(j-c) Mounted on epoxy board 5 5 10 IM=10mA IF=100mA 1ms time 300us 0 0.1 1 10 100 0 0.1 1 10 100 1 0.001 0.1 10 1000 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.05 - Rev.B RB501V-40 Data Sheet 0.1 0.08 0.07 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.06 0.25 0.2 0.15 D=1/2 0.1 0.05 0 Sin(θ＝180) DC 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W) D=1/2 0.06 0.04 0.02 0 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 Sin(θ＝180) DC 0.05 0.04 0.03 0.02 0.01 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC D=1/2 Sin(θ＝180) 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.25 0.2 DC 0.15 0.1 0.05 0 0 25 50 Sin(θ＝180) D=1/2 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.05 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A