RB501VM-40

Data Sheet Schottky Barrier Diode RB501VM-40 Applications Low current rectification Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 Land size figure (Unit : mm) 0.9MIN. 0.8MIN. 1.7±0.1 2.5±0.2 Features 1)Small mold type. (UMD2) 2)High reliability UMD2 Construction Silicon epitaxial planer 0 .3±0.05 0.7±0.2 　　　 0.1 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 8.0±0.2 1.40±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VF1 Forward voltage VF2 Reverse current Capacitance between terminals IR Ct Limits 45 40 100 1 125 - 40 to +125 Unit V V mA A °C °C Min. - Typ. 6.0 Max. 0.55 0.34 30 - Unit V V μA pF IF=100mA IF=10mA Conditions VR=10V VR=10V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2.75 1/4 2011.11 - Rev.A 2.8±0.1 2.1 RB501VM-40 　 Data Sheet 100 Ta=125°C FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(µA) 10000 Ta=125°C 1000 Ta=75°C 100 Ta=75°C 10 Ta=25°C 10 Ta=25°C 1 Ta=−25°C 0.1 Ta=−25°C 1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.01 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 470 Ta=25°C IF=100mA n=30pcs 460 FORWARD VOLTAGE:VF(mV) 450 10 440 430 AVE:438.8mV 1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 420 VF DISPERSION MAP 30 Ta=25°C VR=10V n=10pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 20 18 16 14 12 10 8 6 4 AVE:5.81pF 2 Ta=25°C f=1MHz VR=10V n=10pcs 25 REVERSE CURRENT:IR(µA) 20 15 10 AVE:2.57µA 5 0 IR DISPERSION MAP 0 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RB501VM-40 　 Data Sheet 20 1cyc 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 8.3ms REVERSE RECOVERY TIME:trr(ns) IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 10 15 10 5 AVE:5.50A 0 IFSM DISPERSION MAP 5 AVE:6.20nS 0 trr DISPERSION MAP 15 15 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 10 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM t 10 5 5 0 0.1 1 10 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS 1000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 0.1 0.08 FORWARD POWER DISSIPATION:Pf(W) 100 Rth(j-c) D=1/2 0.06 Sin(θ＝180) 0.04 DC 10 0.02 1 0.001 0 0.01 0.1 1 10 100 1000 0 0.1 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RB501VM-40 　 Data Sheet 0.07 0.3 0A 0.25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0V t 0.2 DC 0.15 D=1/2 0.1 Sin(θ＝180) T Io VR D=t/T VR=20V Tj=125°C 0.06 REVERSE POWER DISSIPATION:PR (W) 0.05 0.04 Sin(θ＝180) D=1/2 0.02 DC 0.01 0.03 0.05 0 0 10 20 30 0 0 25 50 75 100 125 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta) 0.3 0A 0V t 0.2 DC 0.15 D=1/2 0.1 Sin(θ＝180) T Io VR D=t/T VR=20V Tj=125°C 0.25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.05 0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A